Development behaviour of irradiated microstructures

Zanghellini, J.; El-Kholi, A.; Mohr, J.

doi:10.1016/s0167-9317(96)00095-0

Cited by 14 publications

(13 citation statements)

References 2 publications

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“…But so far the influence of the deposited dose value and depth of deposition on the development process has not been taken into consideration. Experimental studies carried out to determine this influence indicated that in the investigated dose area from 5 to 9 kJ/cm3 the development rate for the same dose value is in inverse proportion to the square root of the depth, Zanghellini et al (1997). For values in this dose area linear proportion exists between dose and developemnt rate which can be expressed by the following experimental formula:…”

Section: Dip Developmentmentioning

confidence: 97%

“…To record the development course during the development process a mechanical measuring instrument with a probe tip less than 30 m in diameter was constructed, Zanghellini et al (1997). The probe tip is movable in every room direction and can be positioned with an accuracy of a few microns above an irradiated microstructure which is fixed in a developing bath.…”

Section: Measurement Systemmentioning

confidence: 99%

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New development strategies for high aspect ratio microstructures

Zanghellini¹,

Achenbach²,

El-Kholi³

et al. 1998

Microsystem Technologies

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In the first step of the LIGA process a resist layer, typically PMMA (polymethylmethacrylate), is pattered by deep X-ray lithography. The exposed parts are subsequently dissolved by an organic developer. The quality and the achievable height of the microstructure is decisively determined by the development process. In order to increase the aspect ratio and maintain the quality of the microstructures the parameters influencing the development process were investigated. In the case of dip development and ultrasound development a strong dependency of the development rate on the temperature, dose value and depth of deposition has been noticed. The development rate increases with increasing dose value and temperature and decreases with increasing depth of deposition. In case of dip development the development course can be described by a phenomenological equation which considers the three mentioned parameters. In the case of ultrasound further parameters have to be taken into account: the geometry and the dimensions of the strucutres.

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Section: Dip Developmentmentioning

confidence: 97%

Section: Measurement Systemmentioning

confidence: 99%

New development strategies for high aspect ratio microstructures

Zanghellini¹,

Achenbach²,

El-Kholi³

et al. 1998

Microsystem Technologies

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“…The megasonic supported development of LIGA microstructures was first suggested and investigated by Zanghellini et al [2,5]. It was shown that the megasonic agitation increases the development rate and that the development rate depends on both the lateral form of the structures and the acoustical intensity.…”

Section: Introductionmentioning

confidence: 99%

“…This technology combines deep X-ray lithography, electroforming and moulding. Mass transport has a considerable effect on the development [2] and the electroplating of high aspect ratio microstructures [3]. These processes can be accelerated by means of ultrasonic agitation.…”

Section: Introductionmentioning

confidence: 99%

Development of a sonovoltammetric cell for mass transport investigations in the LIGA-process under megasonic agitation

Lisinenkova¹,

Bade²,

Hahn³

et al. 2007

Electrochimica Acta

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“…Further, it appears that there is no systematic influence of the geometry or lateral dimension of the microstructures on the development rate when the development is allowed to proceed on its own without any means of agitation ͑magnetic stirring or sonic assistance͒. 9 Previous studies have shown that magnetic stirring alone could not increase the development rate in case of high aspect ratios of the order of 30 and more. When ultrasonics/megasonics are used, there is a strong depen-a͒ Also at: National Center for Scientific Research ͑CNRS͒, UMR 8624, University Paris-XI, Orsay, France.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of alternative development process for high-aspect-ratio poly(methylmethacrylate) microstructures in deep x-ray lithography

Malek

Yajamanyam

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The development of very thick commercial sheets of poly(methyl methacrylate) (PMMA) resist patterned by deep x-ray lithography was investigated. The development characteristics were explored, with the alternative methyl-iso-butyl-ketone (MIBK)-based developer systems, MIBK and MIBK/ iso-propyl-alcohol (IPA) 1:3, being compared with the “GG” developer system (2-butoxyethoxy-ethanol, morpholine, 2-aminoethanol, and water) more generally used. In particular, the influence of various parameters were studied: PMMA characteristics (resist thickness, pre-exposure thermal treatment), exposure conditions (x-ray incident energy, dose at the bottom of the resist, rate of dose deposition, distribution of dose inside the resist), development conditions (temperature, megasonic-assistance, length of cycle into developer and rinse baths), postexposure treatments (storage, thermal treatment), etc. The study also focused on surface finish of the parts corresponding to different exposure and development conditions. Using MIBK/IPA megasonic assisted development and postexposure treatment at 40 °C resulted in the best conditions, faster development rate, as well as smoother developed surfaces.

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Development behaviour of irradiated microstructures

Cited by 14 publications

References 2 publications

New development strategies for high aspect ratio microstructures

New development strategies for high aspect ratio microstructures

Development of a sonovoltammetric cell for mass transport investigations in the LIGA-process under megasonic agitation

Evaluation of alternative development process for high-aspect-ratio poly(methylmethacrylate) microstructures in deep x-ray lithography

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