Development of a high-resolution active-matrix electron emitter array for application to high-sensitivity image sensing

Abstract

Articles you may be interested inActive-matrix Spindt-type field emitter array with faster response time for image sensor with high-gain avalanche rushing amorphous photoconductor target J. Vac. Sci. Technol. B 33, 012205 (2015); 10.1116/1.4906103 2 ∕ 3 in. ultrahigh-sensitivity image sensor with active-matrix high-efficiency electron emission device J. Vac. Sci. Technol. B 28, C2D11 (2010); 10.1116/1.3271163 640 × 480 pixel active-matrix Spindt-type field emitter array image sensor with high-gain avalanche rushing amorphous photoconductor target J. Vac. Sci. Technol. B 28, 96 (2010); 10.1116/1.3272732Enhanced output current density of an active-matrix high-efficiency electron emission device array with 13.75 μ m pixels Development of a super-high-sensitivity image sensor using 640 × 480 pixel active-matrix high-efficiency electron emission device An image sensor consisting of an active-matrix high-efficiency electron emission device ͑HEED͒ array and a high-gain avalanche rushing amorphous photoconductor ͑HARP͒ has been fabricated. Based on the demonstration that a prototyped 256ϫ 192 pixel image sensor can pick up a high definition image with an ultrahigh sensitivity under poor light condition, the authors have been developing a 640ϫ 480 pixel active-matrix HEED toward a practical use. The emission current density has been enhanced more than twice compared to that of previous one and has increased up to 1 A/cm 2 . The active-matrix HEED array combined with HARP is available for application to practical image sensing with an ultrahigh sensitivity and high definition.

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

“…Planar metal-oxide-semiconductor (MOS) electron emission devices − have excellent attributes, such as a low driving voltage, they function at low , and atmospheric pressures , and in liquids, − and have a low divergence angle for the electron beam . Several practical applications have been proposed, including in field emission displays, , in highly sensitive image sensors, − and for electron beam lithography systems. − The electron emission source plays a critical role in the performance of electron microscopy setups, such as scanning electron microscopes (SEM), transmission electron microscopes (TEM), and electron beam lithography. Compared with Schottky-type electron sources and tungsten field emitters, MOS-type electron emission devices are disadvantaged by their broad emitted electron energy spread.…”

SAPHIRE (scintillator avalanche photoconductor with high resolution emitter readout) for low dose x-ray imaging: Spatial resolution

“…To alleviate this problem, active matrix FEA has recently been developed, where each pixel is addressed through a transistor. 12,13 Compared to existing AMFPI, SAPHIRE has the following advantages: ͑1͒ Programmable avalanche gain g av ensures a wide dynamic range. By increasing the electric field E Se , high g av can be applied at low dose applications ͑e.g., fluoroscopy or tomosynthesis͒ to achieve x-ray quantum noise limited performance, while g av is turned off at high dose ͑e.g., radiography͒.…”