Development of a Simple Analytical PSpice Model for SiC-Based BJT Power Modules

Johannesson, Daniel; Nawaz, Muhammad

doi:10.1109/tpel.2015.2477477

Cited by 18 publications

(14 citation statements)

References 25 publications

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“…The results of the simulations [31], [32] indicate that the model match well with the measurements for both devices, representing the expected differences in the transient currents. Fig.…”

Section: Experimental Set-upsupporting

confidence: 58%

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Shen

Jahdi

Yang

et al. 2022

IEEE Open J. Ind. Electron. Soc.

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The 4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switching devices with high voltage ratings in range of 1.7 kV and high operating temperatures. In this paper, the advantages of the 4H-SiC NPN BJTs in terms of switching transients and current gain over their silicon counterparts is illustrated by means of extensive experimental measurements and modelling, including investigation of high level injection, as a common phenomenon in bipolar devices that influences the switching rates and DC current gain. The two device types have been tested at 800 V with maximum temperature of 175°C and maximum collector current of 8 A. The turn-ON and turn-OFF transition in Silicon BJT is seen to be much slower than that of the SiC BJT while the transient duration will increase with increasing temperature and decreases with larger collector currents. The common-emitter current gain of SiC BJT is also found to be much higher than silicon counterparts, increasing with temperature in low injection levels but decreasing in higher injection levels in both devices. The rate of increase of current gain slows down toward stability as the collector current increases, known as the high-level injection. Current sharing imbalance among parallel connected devices is also investigated, which are shown to be evidently dependant on temperature and base resistance in Silicon BJT, while the current collapse in also seen in SiC BJT at high injection levels with high base resistance. The turn-OFF delay is seen to be temperature dependant in single and paralleled Silicon BJTs while almost non-existent in SiC device.

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“…The results of the simulations [31], [32] indicate that the model match well with the measurements for both devices, representing the expected differences in the transient currents. Fig.…”

Section: Experimental Set-upsupporting

confidence: 58%

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Shen

Jahdi

Yang

et al. 2022

IEEE Open J. Ind. Electron. Soc.

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“…Comparison waveforms for verification of the BJT models in Wang et al 17 and Johannesson and Nawaz 19 …”

Section: Model Optimization With Simplex Methods and The Validationmentioning

confidence: 99%

“…The measured C-V curve data were used to calculate the barrier capacitance by subtracting the value from (19). Partial barrier capacitance C-V curves were obtained at different transit times τ F , as shown in Figure 3N.…”

Section: Parasitic Capacitance Parametersmentioning

confidence: 99%

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A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

Pan,

Zhang,

Ren

et al. 2023

Circuit Theory & Apps

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SummaryBipolar junction transistors (BJTs) are widely used in various electronic systems, and the establishment of the electromagnetic compatibility (EMC) model for BJTs is crucial for EMC analysis of these systems, such as high‐frequency circuits. In this paper, a BJT EMC model that satisfies both functionality and EMC analysis requirements was established based on physical characteristic measurement. First, comprehensive and systematic methods for measurement and extracting SPICE parameters based on physical BJTs are presented, including a proposed curve‐fitting calculation method for extracting barrier capacitance parameters. Second, an analysis of the impact of major BJT electrical characteristics parameters was conducted, leading to the identification of important model parameters affecting BJT functionality and EMC. Finally, the primary BJT model was optimized using the simplex method, and a method for EMC analysis and verification of the BJT model was presented. The experimental and simulation results are in good agreement, and the established model meets the accuracy requirements for both EMC and functionality. Therefore, the proposed method is feasible and suitable for the EMC modeling of BJTs.

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“…The authors of [19]- [21] analyzed the influence of temperature of SiC devices on the driving resistance in detail, but did not study the junction temperature characteristics of SiC and ordinary Si devices in actual operation. At present, PSPICE simulation method is mostly adopted in the research of SiC devices to study the self-characteristics of devices under different conditions by establishing different models [22], [23].…”

Section: Introductionmentioning

confidence: 99%

Research on Single-Switch Wireless Power Transfer System Based on SiC MOSFET

Wang

Liu

et al. 2019

IEEE Access

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The traditional wireless power transfer circuit uses the full-bridge or half-bridge inverter, which has complex circuit and control and low reliability. To solve these problems, a single-switch LC resonant circuit is proposed, which is simple in structure and can realize zero voltage switching (ZVS) without the problem of shoot-through. The circuit parameters and working process are modeled and analyzed. However, due to the influence of resonance, the common Si devices can not meet the demand because of the high blocking voltage of the switch. For this purpose, the circuit characteristics of SiC-based devices are studied, and the differences of driving and temperature characteristics between SiC MOSFET and Si MOSFET are compared. Finally, a single switch wireless power transfer (WPT) platform based on SiC MOSFET is built, which proves that SiC devices have great advantages in the field of WPT.

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Development of a Simple Analytical PSpice Model for SiC-Based BJT Power Modules

Cited by 18 publications

References 25 publications

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

Research on Single-Switch Wireless Power Transfer System Based on SiC MOSFET

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