Development of ALD/PECVD Reactor for High Quality LTPS-TFTs Insulator

Abstract

A high quality gate insulator is one of the key technologies for improving the performance of Low Temperature Poly Silicon TFTs. We propose an all-new stacked gate insulator, which is prepared with ALD technology for an interfacial layer, and a monopole antenna Plasma Enhanced Chemical Vapor Deposition (PECVD) technology for a secondary layer. The ALD/PECVD reactor, which handles glass substrates of 370 mm×470 mm in size was developed, and its performance was evaluated. Silicon dioxide films were deposited at 400℃ with the reactor. Thickness variations of the ALD film and the PECVD film were confirmed to be less than ±5% and ±10%, respectively. The stacked insulator, which was composed of the 2nm-ALD film and the 100nm-PECVD film, had an excellent Si/SiO 2 interface of 1×10 11 cm -2 eV -1 and breakdown electrical field of 7.5 MVcm -1 .

Large Scaled ALD/PECVD Reactor for Flat Panel Display Application

“…The density decreased with increasing distance from the antenna. In the previous paper, we reported the profile of the electron temperature, and the temperature was higher at closer position to the antennas (10). These results suggest that the plasma is localized around the antennas.…”

“…The gate insulator is one of the development subjects for the next generation TFTs (7)(8)(9). We have proposed an all-new stacked gate insulator, which employs ALD technology for the interfacial layer, and monopole antenna Plasma Enhanced Chemical Vapor Deposition (PECVD) technology for the secondary layer (10). We reported the performance of the ALD/PECVD reactor, which handles glass substrates of 370 mm 470 mm in size.…”