Development of highly reliable Cu wiring of L/S=1/1&amp;#x00B5;m for chip to chip interconnection

Kanki, Tsuyoshi; Ikeda, Junya; Kobayashi, Yasushi; Suda, Satoshi; Nakata, Yoshihiro; Nakamura, Tomoji

doi:10.1109/iitc.2012.6251635

Cited by 9 publications

(7 citation statements)

References 1 publication

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“…With the progress of miniaturization in size and advancement in functionality, further scaling down of Cu wiring and blind via is needed not only in LSI chips but also in packaging substrates [1]. The organic multi-chip package, a combination of organic interposer and organic substrate, has attracted increasing attention in realizing further advancements of electronic devices with higher densities and more functions [2].…”

Section: Introductionmentioning

confidence: 99%

Study of Adhesion Properties of Cu on Photosensitive Insulation Film for Next Generation Packaging

Iwashita

Katoh

Nakamura

et al. 2015

J. Photopol. Sci. Technol.

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As the demand for advanced packaging is growing, the organic multi-chip package, a combination of organic interposer and organic substrate have attracted increasing attention in realizing further advancements of electronic devices with higher densities and more functions. The semi-additive process (SAP) method has been developed for Cu wiring and blind via in packaging substrate. To make the fine Cu wiring below 5 μm, the sputtering Ti/Cu has been studied. While opening a blind via below 50 μm in diameter, the laser method has problem. Photosensitive organic materials having great mechanical strength and heat resistance were mainly used as protection and insulation layers of very large scale integrated circuit, because they simplify the via formation processing and did not generate the residues during process. Specifically, we have newly developed the film type photosensitive insulation materials. Our photosensitive insulation films (PIFs) showed high resolution, high adhesion strength with Ti/Cu seed layer and suitability to SAP with the sputtering process.

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Section: Introductionmentioning

confidence: 99%

Study of Adhesion Properties of Cu on Photosensitive Insulation Film for Next Generation Packaging

Iwashita

Katoh

Nakamura

et al. 2015

J. Photopol. Sci. Technol.

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“…With the progress of miniaturization in size and advancement in functionality, further scaling down of Cu wiring and blind via is needed not only in LSI chips but also in packaging substrate [1]. The organic multi-chip package and fan-out wafer level packages (FO-WLPs) have received increasing attention in realizing the further advancements of electronic devices with high densities and large functions [2,3].…”

Section: Introductionmentioning

confidence: 99%

Study of Low Temperature Curable Polybenzoxazole Precursors Containing Aliphatic Dicarboxylic Acid Structures

Iwashita

2017

J. Photopol. Sci. Technol.

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As a demand for advanced packaging is growing, the photosensitive insulation material curable below 200 o C is required. We focused on photosensitive polybenzoxazoles derived from aliphatic dicarboxylic acids unit to reduce low cyclization temperature. We found that polybenzoxazole precursor having long methylene unit showed high cyclization percentage and elongation value at 200 o C of curing temperature.

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“…The precipitate was collected by filtration and washed with water. The product was dried under vacuum overnight to give poly1 as a colorless solid (0.90 g, 94%): 1 …”

Section: Synthesis Of Poly1mentioning

confidence: 99%

“…Thus, there is a continuing requirement for packaging structures for semiconductors to be made smaller and thinner, and consequently further scaling-down of Cu wiring and vias in packaging substrates is needed [1]. The semi-additive process (SAP) is currently a cutting-edge technology for Cu wiring and via formation in packaging substrate manufacturing.…”

Section: Introductionmentioning

confidence: 99%

Photodeprotectable N-Alkoxybenzyl Aromatic Polyamides

et al. 2017

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N-alkoxybenzyl aromatic polyamides were synthesized by polycondensation of N-alkoxybenzyl aromatic diamine with equimolar dicarboxylic acid chloride in the presence of 2.2 equiv. of pyridine at room temperature for 2 days. The obtained polyamides were mainly cyclic polymers, as determined by means of matrix-assisted laser desorption ionization time-of-flight (MALDI-TOF) mass spectrometry, and showed higher solubility in organic solvents than unprotected aromatic polyamides. Photodeprotection of N-alkoxybenzyl aromatic polyamide film containing photo acid generator (PAG) proceeded well under UV irradiation (5 J/cm 2 ), followed by heating at 130 • C for 15 min. The nature of the polymer end groups of N-alkoxybenzyl aromatic polyamides was found to be crucial for photodeprotection reactivity. These polymers are promising candidates for photosensitive heat-resistant materials for fine Cu wiring formation by electroless Cu plating of high-density semiconductor packaging substrates.

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Development of highly reliable Cu wiring of L/S=1/1µm for chip to chip interconnection

Cited by 9 publications

References 1 publication

Study of Adhesion Properties of Cu on Photosensitive Insulation Film for Next Generation Packaging

Study of Adhesion Properties of Cu on Photosensitive Insulation Film for Next Generation Packaging

Study of Low Temperature Curable Polybenzoxazole Precursors Containing Aliphatic Dicarboxylic Acid Structures

Photodeprotectable N-Alkoxybenzyl Aromatic Polyamides

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