Development of n-in-p silicon planar pixel sensors and flip-chip modules for very high radiation environments

Unno, Y.; Ikegami, Y.; Terada, S.; Mitsui, S.; Jinnouchi, O.; Kamada, S.; Yamamura, K.; Ishida, A.; Ishihara, M.; Inuzuka, Tadao; Hanagaki, K.; Hara, K.; Kondo, T.; Kimura, Norihisa; Nakano, I.; Nagai, K.; Takashima, R.; Tojo, J.; Yorita, K.

doi:10.1016/j.nima.2010.12.191

Cited by 16 publications

(13 citation statements)

References 5 publications

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“…The passivation with proper interface charge repels the carriers from the sidewall effectively achieving a resistive surface [15]. This is analogous to the voltage drop along the top surface in the guard ring region of a single-sided sensor, where a certain distance is required to sustain a given bias voltage [16]. In the SCP method the sidewall takes the role of the top region allowing the voltage gradient on its surface.…”

Section: Introductionmentioning

confidence: 99%

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Rafı́

Pellegrini

Fadeyev

et al. 2016

Solid-State Electronics

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The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance-voltage and current-voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2Ogrown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and nonirradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100ºC and 200ºC and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. This can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.

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Section: Introductionmentioning

confidence: 99%

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Rafı́

Pellegrini

Fadeyev

et al. 2016

Solid-State Electronics

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“…Finally, ATLAS is also producing thin n-in-p FZ pixel sensors [41] with Hamamatsu. The 6 inch wafers contain 1-and 4-chip FE-I3 compatible devices and 1-and 2-chip FE-I4 compatible devices.…”

Section: Atlas Upgrade Thin Pixel Sensors (Hamamatsu)mentioning

confidence: 99%

Latest developments in planar n-on-p sensors

Affolder¹

2012

Proceedings of the 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011)

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To further extend the ultimate physics reach of the experiments at the Large Hadron Collider (LHC), a series of accelerator and experimental upgrades are planned between 2014 and 2022. The final machine upgrade, called the High Luminosity-LHC (HL-LHC), is foreseen to increase the instantaneous luminosity by a factor ten with a targeted total integrated luminosity of 3000 fb −1. To cope with the predicted high particle rates and intense radiation doses, n-inp FZ planar technolgy has been developed with remarkable radiation tolerance. This technology might even be able to withstand the harsh environment at the innermost layers of the experimental upgrades for the HL-LHC. This article summarizes the current understanding of the radiation tolerance of n-in-p FZ sensors. Plans and recent progress in prototyping silicon micro-strip and pixel devices at various foundries is shown. The different R&D efforts to reduce the inactive regions and to enhance the charge multiplication properties of such devices are also described.

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“…[7]. There were multiple lines of p-stops (1 p-stop (1p): common p-stop, 2 p-stops (2p): individual p-stop), with various pitches, p-stop widths, gaps between p-stops, and location of p-stops.…”

Section: P-stop Structures Between N-implantsmentioning

confidence: 99%

“…The novel PTP structures were implemented on the miniature strip sensors at sites #58-#70 in wafter/batch#1 as shown in ref. [7]. Their schematics are given in Figure 7 and are classified as: BZ4, the miniature sensor type; B-D, "Atoll" type p-stop structures (B), "Compartment" type (C), and "Simple" type (D); 1-4 (for B-C) and 1-5 (for D) the gate type of "gate over p-stop" (1 (B-C), 2 (D)), "no gate" (2 (B-C), 3 (D)), "gate over p-stop #2" (3 (B-C), 4 (D)), and "gate full coverage" (4 (B-C), 5 (D)).…”

Section: Novel Ptp Structurementioning

confidence: 99%

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TCAD simulations of silicon strip and pixel

Unno¹,

Ikegami²,

Yamamura³

et al. 2012

Proceedings of the 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011)

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Technology computer-aided design (TCAD), used in the semiconductor industry, simulates the semiconductor manufacturing process and the resulting device performance. We have used a device simulator to develop a highly radiation-tolerant n-in-p silicon strip and pixel sensors, both of which can operate at a very high voltage of up to 1000 V. We analyzed the electric field in the pstop structures, novel punch-through-protection (PTP) structures, breakdown in the edge region, etc. and compared the analysis results with the measurement results of test structures; our findings contributed to the development of guiding principles for optimizing the critical structures. The TCAD device simulator is a valuable and effective tool as long as relevant semiconductor physics models and their parameters are implemented. We have yet to understand the modeling of the surface-bulk interplay after proton irradiation, the leakage current generation in the dicing edge, and other phenomena.

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Development of n-in-p silicon planar pixel sensors and flip-chip modules for very high radiation environments

Cited by 16 publications

References 5 publications

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Latest developments in planar n-on-p sensors

TCAD simulations of silicon strip and pixel

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