Development of n-type Selective Emitter Silicon Solar Cells by Laser Doping Using Boron-doped Silicon Paste

Tomizawa, Yuka; Ikeda, Yuichi; Takano, Shiro

doi:10.1016/j.egypro.2016.07.122

Cited by 15 publications

(6 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Solar cell devices with conversion efficiencies of over 19% have been achieved by the laser doping process (Tomizawa et al 2016). However, laser-induced damage must be avoided in order to achieve high solar cell efficiencies.…”

Section: Laser Dopingmentioning

confidence: 99%

Laser-Induced Surface Modification for Photovoltaic Device Applications

Gupta¹

2020

Handbook of Laser Micro- And Nano-Engineering

View full text Add to dashboard Cite

High-power lasers are extensively used for the fabrication of photovoltaic devices, medical devices, electronics and MEMS packaging, photonic device integration, consumer electronic devices such as smartphones, organic lightemitting diodes (OLED), and semiconductor devices and in the area of printed circuit boards. In the area of photovoltaic device fabrication, lasers are used for microtexturing of surfaces to improve light-trapping properties, laser doping to make n-and p-type semiconductors, electrical contacts, electrical isolation,

show abstract

Section: Laser Dopingmentioning

confidence: 99%

Laser-Induced Surface Modification for Photovoltaic Device Applications

Gupta¹

2020

Handbook of Laser Micro- And Nano-Engineering

View full text Add to dashboard Cite

show abstract

“…The most common application of laser technology is scribing thinfilm solar cells to generate large-scale and series-connected photovoltaic modules (Gupta and Carlson 2015). Laser is also used in the edge isolation process (Singh et al 2014), selective emitter formation (Victor et al 2015), doping (Tomizawa et al 2016), all-lasertransferred contact (ALTC) (Wang et al 2015), drilling (Zhang et al 2016) and surface modification (Radfar et al 2018).…”

Section: Introductionmentioning

confidence: 99%

Influence of front surface single-pulse laser drilling on a bifacial solar cell determined through simulation and experiment

et al. 2021

View full text Add to dashboard Cite

This study presents the impact of surface modification on bifacial solar cells through single-pulse drilling to enhance efficiency and optical characterisation. A single-pulse laser operates at a wavelength of 1.06 μm, and the microsecond length is a function of its energy and structure setup. The front surface is drilled with two laser energy settings, namely, 23.5 W and 39.6 W, to create a range of micro-holes with distinct depths, widths and crystallographic defects. The modification of the front laser surface has enhanced current density and effectiveness by capturing light in the crystallisation region and the inner region of the micro-holes. Cell topography shift reduces the recombination of electron/hole on the surface. The rear surface registers efficiency digression because of a crystallographic defect that increases optical losses that boost the recombination of hole/electron. The efficiency of the cell with low-power front surface laser drilling increases 1.38%, but that of the cell with low-power back surface laser drilling drops 2.12%. High-power laser drilling increases 1.46% for the front surface and decreases 1.36% for the back surface. Optical characterisation via infrared transmission shows that light increment at a wavelength of 1100 nm is transmitted through the laser drill's micro-holes. The different depths and widths of the micro-holes determine the light transmission rate that can travel to the back surface. The growth of holes improves the light-scattering and absorption regions, affecting cell efficiency.

show abstract

“…The solar industry has been attracting attention as a future energy source, and the demand and supply market for crystalline silicon (c-Si) solar cells has been gradually expanding. However, the maximum efficiency of conventional c-Si solar cell fabrication technology is limited, so it is necessary to study this technology in order to improve its efficiency [1][2][3]. Currently, new methods of increasing efficiency involve cell design modifications using selective emitters [4].…”

Section: Introductionmentioning

confidence: 99%

Effects of Laser Doping on the Formation of the Selective Emitter of a c-Si Solar Cell

et al. 2020

View full text Add to dashboard Cite

Laser doping, though able to improve cell characteristics, enables the formation of a selective emitter without the need for additional processing. Its parameters should be investigated to minimize laser defects, such as the heat-affected zone (HAZ), and to obtain a low contact resistance. Herein, the laser fluence and speed were changed to optimize process conditions. Under a laser fluence of 1.77 J/cm2 or more, the surface deteriorated due to the formation of the HAZ during the formation of the laser doping selective emitter (LDSE). The HAZ prevented the formation of the LDSE and impaired cell characteristics. Therefore, the laser speeds were changed from 10 to 70 mm/s. The lowest contact resistivity of 1.8 mΩ·cm2 was obtained under a laser fluence and speed of 1.29 J/cm2 and 10 mm/s, respectively. However, the surface had an irregular structure due to the melting phenomenon, and many by-products were formed. This may have degraded the efficiency due to the increased contact reflectivity. Thus, we obtained the lowest contact resistivity of 3.42 mΩ·cm2, and the damage was minimized under the laser fluence and speed of 1.29 J/cm2 and 40 mm/s, respectively.

show abstract

Development of n-type Selective Emitter Silicon Solar Cells by Laser Doping Using Boron-doped Silicon Paste

Cited by 15 publications

References 6 publications

Laser-Induced Surface Modification for Photovoltaic Device Applications

Laser-Induced Surface Modification for Photovoltaic Device Applications

Influence of front surface single-pulse laser drilling on a bifacial solar cell determined through simulation and experiment

Effects of Laser Doping on the Formation of the Selective Emitter of a c-Si Solar Cell

Contact Info

Product

Resources

About