Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example

He, Jr Hau; Ke, Jr‐Jian; Chang, Pei-Hsin; Tsai, Kun-Tong; Yang, Po-Chun; Chan, Isaac

doi:10.1039/c2nr30688c

Cited by 32 publications

(15 citation statements)

References 35 publications

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“…By this model fitting we extract a contact resistivity of 2.59 ± 0.08 mΩ‐cm 2 for a 140 nm wire based on a contact area of 1.78 × 10 −9 cm 2 . Although these contacts have higher resistivity than contacts prepared by 30 kV Ga beam pre‐treatment, the contacts were prepared without implanting the wire with an n‐type dopant or depositing multiple metal layers such as Ti/Au contacts.…”

Section: Resultsmentioning

confidence: 99%

Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach

et al. 2017

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Ohmic and rectifying metal contacts to semiconductor nanowires are integral to electronic device structures and typically require different metals and different process techniques to form. Here we show how a noble metal ion beam of Pt commonly used to pattern conducting contacts in electron microscopes can form both ohmic and Schottky/blocking contacts on ZnO nanowires by controlling native point defects at the intimate metal-semiconductor interface. Spatially-resolved cathodoluminescence spectroscopy on a nanoscale both laterally and in depth gauges the nature, density, and spatial distribution of specific native point defects inside the nanowires and at their metal interfaces. Combinations of electron and ion beam deposition, annealing, and sculpting of the same nanowire provide either low contact resistivity ohmic contacts or a high Schottky/blocking barrier with a single metal source. These results highlight the importance of native point defects distributed inside nanowires and their variation near interfaces with sculpting and annealing.

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Section: Resultsmentioning

confidence: 99%

Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach

et al. 2017

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“…Direct-written Pt deposition by FIB was used to prepare Pt electrodes. Even though the work function of Pt (~6.1 eV) is higher than that of pure ZnO (~5.1 eV), the contact electrodes of ZnO/Pt fabricated by Ga ion surface modification process and direct-written Pt deposition could still be Ohmic [ 28 ]. Figure 2 c shows the I – V characteristics of the ZnO NW and Sb–ZnO NW.…”

Section: Resultsmentioning

confidence: 99%

A Self-Powered Fast-Response Ultraviolet Detector of p–n Homojunction Assembled from Two ZnO-Based Nanowires

Wang¹,

Chen²,

Zhao³

et al. 2016

Nano-Micro Lett.

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Nowadays, fabrication of micro/nano-scale electronic devices with bottom-up approach is paid much research attention. Here, we provide a novel micro/nano-assembling method, which is accurate and efficient, especially suitable for the fabrication of micro/nano-scale electronic devices. Using this method, a self-powered ZnO/Sb-doped ZnO nanowire p–n homojunction ultraviolet detector (UVD) was fabricated, and the detailed photoelectric properties were tested. At a reverse bias of −0.1 V under UV light illumination, the photoresponse sensitivity of the UVD was 26.5 and the rise/decay time of the UVD was as short as 30 ms. The micro/nano-assembling method has wide potential applications in the fabrication of specific micro/nano-scale electronic devices.Graphical AbstractA self-powered ZnO/Sb-doped ZnO nanowire p-n homojunction ultraviolet detector (UVD) was fabricated by using a novel micro/nano-assembling method with bottom-up approach. At reverse bias of −0.1 V under UV light illumination, the photoresponse sensitivity of the UVD was 26.5, and the rise time and decay time of the UVD were as short as 30 ms.

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“…The electrical properties of nanowire-based FET devices sensitively depend on their size and shape, defects and impurities, and surface states or defects [7][8][9]. Moreover, it has been generally accepted that the contacts between the nanowire and the metal electrodes play also an important role in the charge transport properties of nanowire-based FETs due to their large surface-to-volume ratio coupled with unique geometry [10][11][12]. For example, Lee and coworkers reported the distinct electrical transport features of FETs made from ZnO nanowires with two different types of geometric properties: one type consisted of corrugated nanowires with a relatively smaller diameter and higher density of surface states or defects, and the other type involved smooth ZnO nanowires with a relatively larger diameter and lower density of surface states or defects [7].…”

Section: Introductionmentioning

confidence: 99%

“…Lord et al [10] showed that the electrical transport behavior of nanocontacts between ZnO nanowires and Au metals can switch from Schottky to Ohmic depending on the size of the metal contact in relation to the nanowire diameter. Jo et al [11] and He et al [12] demonstrated the influence of the contact resistance on the electrical properties in In 2 O 3 and ZnO nanowires, respectively.…”

Section: Introductionmentioning

confidence: 99%

Effects of Applied Voltages on the Charge Transport Properties in a ZnO Nanowire Field Effect Transistor

et al. 2020

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We investigate the effect of applied gate and drain voltages on the charge transport properties in a zinc oxide (ZnO) nanowire field effect transistor (FET) through temperature- and voltage-dependent measurements. Since the FET based on nanowires is one of the fundamental building blocks in potential nanoelectronic applications, it is important to understand the transport properties relevant to the variation in electrically applied parameters for devices based on nanowires with a large surface-to-volume ratio. In this work, the threshold voltage shift due to a drain-induced barrier-lowering (DIBL) effect was observed using a Y-function method. From temperature-dependent current-voltage (I-V) analyses of the fabricated ZnO nanowire FET, it is found that space charge-limited conduction (SCLC) mechanism is dominant at low temperatures and low voltages; in particular, variable-range hopping dominates the conduction in the temperature regime from 4 to 100 K, whereas in the high-temperature regime (150–300 K), the thermal activation transport is dominant, diminishing the SCLC effect. These results are discussed and explained in terms of the exponential distribution and applied voltage-induced variation in the charge trap states at the band edge.

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Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example

Cited by 32 publications

References 35 publications

Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach

Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach

A Self-Powered Fast-Response Ultraviolet Detector of p–n Homojunction Assembled from Two ZnO-Based Nanowires

Effects of Applied Voltages on the Charge Transport Properties in a ZnO Nanowire Field Effect Transistor

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