2005 IEEE Pulsed Power Conference 2005
DOI: 10.1109/ppc.2005.300545
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Development of Repetitive Pulsed Power Generators Using Power Semiconductor Devices

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Cited by 11 publications
(4 citation statements)
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“…Common to all the circuits presented is the fact that only semiconductor switches can be used, as MHz on-off capability is needed. Hence, the present demand for pulse generator technology has been driven by the evolution of solid state pulse generators, with optimized performance and reliability [26]. This has been pushed by the development of more efficient semiconductor switches, being the MOSFETs, i.e., metal oxide semiconductor field effect transistors, based on SiC technology, presently the most used switches.…”
Section: Introductionmentioning
confidence: 99%
“…Common to all the circuits presented is the fact that only semiconductor switches can be used, as MHz on-off capability is needed. Hence, the present demand for pulse generator technology has been driven by the evolution of solid state pulse generators, with optimized performance and reliability [26]. This has been pushed by the development of more efficient semiconductor switches, being the MOSFETs, i.e., metal oxide semiconductor field effect transistors, based on SiC technology, presently the most used switches.…”
Section: Introductionmentioning
confidence: 99%
“…Repetitive PPGs benefit from high reliability, smaller size and lower maintenance compared to conventional PPGs [25]. Semiconductor switches and magnetic switches are usually used to improve the performance of PPGs [24], [26]- [28].…”
Section: Introductionmentioning
confidence: 99%
“…High voltage pulsed power technology [1,2,3,4] has been widely used in industrial applications and military defense applications, such as food processing, medical treatment, environment protection and others [5,6,7,8]. Over the past decades, solid-state power devices [9,10,11] have become the preferred choice of pulse switch in pulse modulators due to their high efficiency, long lifetime, light weight and low cost [12]. Among these devices, the base resistance controlled thyristor (BRT) [13,14,15,16,17,18] attracted considerable attention because of its ultra-high current density, reduced forward voltage drop and double-diffusion process which compatible with IGBT [19,20,21].…”
Section: Introductionmentioning
confidence: 99%