Development of self-packaged high frequency circuits using micromachining techniques

Drayton, R.F.; Katehi, L.P.B.

doi:10.1109/22.414543

Cited by 62 publications

(17 citation statements)

References 15 publications

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“…When the structure is symmetrical then C 11 = C 22 . For even mode excitation, C 12 is effectively open-circuited meaning the even-mode capacitance and characteristic impedance are given by…”

Section: Design Of a Novel Non-contact Vertical Interconnectmentioning

confidence: 99%

“…The origins for this type of transmission line lie in a combination of the work conducted using a membrane-supported CPW (coplanar-waveguide) geometry on a SiO 2 /Si 3 N 4 /SiO 2 membrane [3][4][5][6][7][8] (also demonstrated using a polymer or epoxy membrane [9][10][11]), and also that involving a self-packaged, grounded CPW (GCPW) configuration using micromachined silicon [12][13][14][15][16][17]. The work described in [1,2] is an extension of these earlier types of miniature membranesupported transmission lines with the addition of full shielding and conversion to a stripline-type geometry.…”

Section: Introductionmentioning

confidence: 99%

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Design of a Non-Contact Vertical Transition for a 3d Mm-Wave Multi-Chip Module Based on Shielded Membrane Supported Interconnects

Farrington¹,

Iezekiel²

2011

PIER B

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Abstract-The preliminary design concept, for a low-loss, highbandwidth electromagnetically coupled vertical transition for use as a via between adjacent levels of a 3D-MCM based on membranesupported striplines with micro-machined shielding, is presented. The design methodology, modeling using Ansoft HFSS and simulated results are presented and together represent a complete electrical characterization of the vertical transition. The simulated insertion loss of these structures is shown to be as low as 0.12 dB at 60 GHz with a 44 GHz 1 dB bandwidth. Besides studying the vertical transition, the analysis is extended to identify the range of directional coupling which can be achieved using this type of structure, which is shown to be greater than 3 dB. The structures studied rely on a versatile micromachining technique for the fabrication of the micro-shielding which allows for the conformal packaging of lines and devices, with the ultimate aim of realizing 3D system-in-a-package type modules. The concept and proposed fabrication techniques for these modules, including methods of flip-chip MMIC attachment are detailed.

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Section: Design Of a Novel Non-contact Vertical Interconnectmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design of a Non-Contact Vertical Transition for a 3d Mm-Wave Multi-Chip Module Based on Shielded Membrane Supported Interconnects

Farrington¹,

Iezekiel²

2011

PIER B

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“…respectively at 40 GHz [12], and thus illustrated the additional ohmic loss introduced through the incorporation of extra shielding. The 'microshield' line shown in Figure 1(g) demonstrated a loss of around 0.6 dB/cm at 60 GHz [17] and an effective relative permittivity of 1.08 across W-band [7].…”

Section: Introductionmentioning

confidence: 99%

“…However, it is theoretically known and experimentally demonstrated [12] that the inclusion of shielding, although suppressing interference effects and radiation losses from the line, can increase ohmic loss compared to an unshielded line. This means the design of micromachined, shielded transmission lines requires consideration of the ultimate application and operational environment along with careful investigation and optimization of line characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…The reduced dielectric CPW line shown in Figure 1(c) demonstrated a loss of 1.18 dB/cm and effective permittivity of 2.7 at 60 GHz [14] (700 nm) (300 nm) (400 nm) Figure 1. Demonstrated micromachined transmission lines for use at millimeter-wave frequencies: (a) and (b) CPW geometries using raised conductors [13], (c) and (d) CPW using bulk micromachining to remove dielectric in the areas of electric field concentration [14][15][16], (e) and (f) CPW with micromachined shielding [12], (g) membrane supported CPW (microshield) [17], [7] (h) membrane supported microstrip [3], (i) membrane supported, partially shielded microstrip [3], (j) membrane supported partially shielded stripline [3], and (k) and (l) the fully shielded membrane supported striplines investigated in this paper.…”

Section: Introductionmentioning

confidence: 99%

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Design and Simulation of Membrane Supported Transmission Lines for Interconnects in a Mm-Wave Multichip Module

Farrington¹,

Iezekiel²

2011

PIER B

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Abstract-Investigations are conducted into low-loss, low-dispersion fully shielded membrane-supported striplines designed for use in a millimeter-wave multi-chip-module. Two types of transmission line are studied: a membrane-supported shielded stripline and a novel variation of this where the membrane material is removed in areas of little mechanical importance to reduce attenuation and dispersion. The latter is possible through the exploitation of a versatile micromachining technique using SU-8 for both the membrane and the shielding. The micromachining techniques used for the fabrication of the microshielding allows for the conformal packaging of lines and devices, with the ultimate aim of the realization of novel components for 3D system-in-a-package type modules. Extensive simulated results obtained from rigorous electromagnetic modeling are presented that fully characterize both types of line and, where possible, are compared to measured results. Loss mechanisms are investigated for both line types and simulations suggest that losses as low as 0.39 dB/cm and effective relative permittivities of less than 1.05 are possible at a frequency of 100 GHz, comparing well with other demonstrated membrane supported transmission lines. The methods used for investigation of line characteristics and analysis of single-mode, nonleaky frequency range are applicable to any variety of membrane supported transmission line. The basics of line fabrication are given along with measurement results and de-embedding techniques used at V-band.

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Electrical performances of self-shielded uniplanar guided-wave structures

Wang

1999

Int J RF and Microwave Comp Aid Eng

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This paper presents electrical performance and propagation characteristics of self‐shielded uniplanar guided‐wave structures including circular, elliptic, diamond, and trapezoidal enclosures. Enhanced spectral domain approach is extended to characterize guided‐wave property of these self‐shielded lines. Particular attention is focused on fundamental mode propagation constant and characteristic impedance of coupled uniplanar line having a practical shield profile. Influence of various parameters of the structure on cutoff frequency of the slotline mode is investigated. Interesting features of the self‐shielded uniplanar structures are discussed for design consideration. Results are verified with some data available and presented in support of the technical discussion. ©1999 John Wiley & Sons, Inc. Int J RF and Microwave CAE 9: 22–31, 1999.

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Development of self-packaged high frequency circuits using micromachining techniques

Cited by 62 publications

References 15 publications

Design of a Non-Contact Vertical Transition for a 3d Mm-Wave Multi-Chip Module Based on Shielded Membrane Supported Interconnects

Design of a Non-Contact Vertical Transition for a 3d Mm-Wave Multi-Chip Module Based on Shielded Membrane Supported Interconnects

Design and Simulation of Membrane Supported Transmission Lines for Interconnects in a Mm-Wave Multichip Module

Electrical performances of self-shielded uniplanar guided-wave structures

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