Device quality ZnO grown using a Filtered Cathodic Vacuum Arc

Elzwawi, Salim; Kim, Hyung Suk; Heinhold, Robert; Lynam, Max; Turner, Gary; Partridge, J. G.; McCulloch, D. G.; Reeves, Roger J.; Allen, Martin W.

doi:10.1016/j.physb.2011.08.074

Cited by 7 publications

(1 citation statement)

References 17 publications

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“…For preparation of films, many techniques have been used including vapor cooling condensation method [18], magnetron sputtering [3,13], chemical bath deposition [19], metal organic chemical vapour deposition (MOCVD) [20], spray pyrolysis [21], plasma-assisted molecular beam epitaxy (PA-MBE) [22,23], reactive electron beam (ebeam) evaporation system [24], dielectric barrier discharged pulsed laser deposition (DBD-PLD) [25], filtered vacuum (cathodic) arc deposition (FVAD, FCVD) [26,27], spin coating method [14], sputtering [15] etc. Pulsed filtered cathodic vacuum arc deposition (PFCVAD) is a common technique to prepare oxide and removal of macroparticles in arc evaporation.…”

Section: Introductionmentioning

confidence: 99%

Comparison of N-doped ZnO and N–Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition

et al. 2014

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N-doped ZnO and N-Al codoped ZnO films are deposited onto glass substrate at room temperature by pulsed filtered cathodic vacuum arc deposition system. The films are characterized by X-ray diffraction, Raman spectra, UV-Vis-NIR spectrophotometer, atomic force microscopy (AFM) and Hall measurements. Films are textured along the (002) direction. AFM images reveal that surface of N-Al codoped ZnO film grown at RT is smoother than that of the N-doped ZnO (ZnO:N) film. Optical band gap of the N-Al codoped ZnO film is higher than that of N-doped ZnO (ZnO:N) film. When N-Al codoped ZnO film is compared to N-doped ZnO film, it is revealed that N-Al codoped ZnO film has a lower hole mobility of 18 cm 2 /V s, a higher hole concentration of 1.205 9 10 19 cm -3 and thus a lower electrical resistivity of 2.730 9 10 -2 ohm cm.

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