Device Simulation of 5.1 nm High-Performance Field-Effect Transistors Based on Two-Dimensional Boron Phosphide

Abstract

The hexagonal boron phosphide (BP) has attracted much attention due to novel electronic and optical properties. Here, we investigate the performance of the 5.1 nm field-effect transistors (FET) based on two-dimensional (2D) BP by ab initio quantum transport calculations. We used different 2D metal materials to construct van der Waals contact in the source region to replace the conventional doping source. The calculated on-state current of the 5.1 nm BP FET with the BoroΔ source and T-VTe 2 source can reach 4891.73 and 4261.85 μA/μm. Specifically, the on/off ratio, the effective delay time (τ), and power-delay product (PDP) of these FETs outperform the standard of ITRS for high-performance transistors. Compared with the conventional doping sources, BoroΔ and T-VTe 2 sources with vdW contact show lower SS and greater device performance. Therefore, our results can become a candidate for future high-performance FET.

Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors

“…Two-dimensional (2D) materials have emerged as promising candidates to tackle these issues. In 2004, the discovery of graphene [ 3 ] drew the attention of researchers to study the potential of 2D materials, such as boron phosphide [ 4 ], black phosphorus [ 5 ] and silicene [ 6 ], for use as channels in devices. Molybdenum disulfide (MoS 2 ) is also a member of the 2D material family and is being considered as a future channel material to solve scaling issues.…”

Theoretical prediction of a type-II BP/SiH heterostructure for high-efficiency electronic devices

“…The BP monolayer is stable at room temperature and exhibits a direct band gap of 0.82-1.83 eV, depending on the computational methods. 36,38 More recently, Jing et al 38 predicted that monolayer BP is a promising candidate for high-performance transistors with a high on-state current. Silicane (SiH) has been predicted to be a stable 2D material and can be obtained by full hydrogenation of silicene.…”