Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes

Rossmann, H.; Bubendorf, Alexander; Zanella, Frédéric; Marjanović, Nenad; Schnieper, Marc; Meyer, Ernst; Jung, Thomas A.; Gobrecht, J.; Minamisawa, R. A.; Bartolf, Holger

doi:10.1016/j.mee.2015.07.002

Cited by 4 publications

(1 citation statement)

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“…The plasma etching can be one of the stages in the process of heterostructures fabrication, such as SiC/SiO 2 , SiC/Si and SiC/glass, by direct adhesive bonding and annealing at T ≤ 200 °C, for potential electronic, optical, mechanical and biomedical applications [ 13 ]. ICP-RIE serves also to obtain: MESA structures of TLM layout in the production of ohmic contacts for SiC [ 14 , 15 ], MOS structures (metal-oxide-semiconductor structures) [ 16 , 17 ], MOSFETs (metal-oxide-semiconductor field effect transistors) [ 8 , 18 ], SiC nanostructures [ 4 , 19 , 20 , 21 ] and photoconductive semiconductor switches (PCSs) [ 22 ].…”

Section: Introductionmentioning

confidence: 99%

A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

et al. 2021

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The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

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