“…As a chemical method, it is advantageous over other physical methods owing to convenience, high growth rate and lack of wastewater discharge. A literature review conrmed that divalent ions such as Ni, Zr, Ce, F, Er, Al, Sn, F and In [20][21][22][23][24][25] have been used as dopants in ZnO thin lms for NLO device applications, whereas only a few reports describe the third-order NLO properties of Zn 1Àx Co x O thin lms. 26 To design and intend metal doped ZnO material as the versatile NLO devices with the cost-effective and enhanced performance we need to realize the doping effect on the basic physical mechanisms of optical nonlinearity arising in it.…”