2015
DOI: 10.1088/1748-0221/10/06/c06016
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Diamond detector for beam profile monitoring in COMET experiment at J-PARC

Abstract: We present the design and initial prototype results of a proton beam profile monitor for the COMET experiment at J-PARC. The goal of COMET is to look for charged lepton flavor violation by direct µ to e conversion at a sensitivity of 10 −19 . The 8 GeV proton beam pulsed at 100 ns with 10 10 protons/s will be used to create muons through pion production and decay. In the final experiment, the proton flux will be raised to 10 14 protons/s to increase the sensitivity. These requirements of harsh radiation tolera… Show more

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Cited by 4 publications
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“…The conversion of the Ta nanodimples to its analogous oxide or nitride opens up a huge array of applications for the nanodimples, such as serving as a base for UV-transparent superhydrophobic coatings, as the active layer in photodiodes for charged particle radiation detection, as a photocatalyst and electrocatalyst to leverage the simultaneously high oxidizing and reducing power of photogenerated holes and electrons, as a catalyst for the rate capability enhancement of lithium sulfur batteries, as a platform for plasmonic hot carrier devices, and so forth. In fact, there has recently been a revival of research interest in the electronic and optoelectronic applications of ultrawide band gap materials with semiconducting properties such as Ga 2 O 3 , Ta 2 O 5 , GeO 2 , and BN. …”
Section: Introductionmentioning
confidence: 99%
“…The conversion of the Ta nanodimples to its analogous oxide or nitride opens up a huge array of applications for the nanodimples, such as serving as a base for UV-transparent superhydrophobic coatings, as the active layer in photodiodes for charged particle radiation detection, as a photocatalyst and electrocatalyst to leverage the simultaneously high oxidizing and reducing power of photogenerated holes and electrons, as a catalyst for the rate capability enhancement of lithium sulfur batteries, as a platform for plasmonic hot carrier devices, and so forth. In fact, there has recently been a revival of research interest in the electronic and optoelectronic applications of ultrawide band gap materials with semiconducting properties such as Ga 2 O 3 , Ta 2 O 5 , GeO 2 , and BN. …”
Section: Introductionmentioning
confidence: 99%