Diamond layout style impact on SOI MOSFET in high temperature environment

Gimenez, Salvador Pinillos; Galembeck, Egon Henrique Salerno; Renaux, Christian; Flandre, Denis

doi:10.1016/j.microrel.2015.02.015

Cited by 24 publications

(11 citation statements)

References 10 publications

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“…This study focuses on and describes the experimental results of devices defined in #1 and #4 on Table I [5][6][7]. Other devices presented similar tendencies.…”

Section: Resultsmentioning

confidence: 97%

“…Regarding the planar CMOS ICs technology, some innovative layouts styles, based on the drain/source-channel interfaces engineering, were proposed to investigate the impact of the gate geometric shape on the electrical performance of MOSFETs, for instance, the Diamond (DM) [5][6][7], Octo (OM) [8], Fish (FM) [9], Wave (WM) [10], and Overlapping-Circular Gate MOSFETs [11]. The ellipsoidal gate shape is another attempt to try to boost the MOSFETs electrical performance, since the resultant longitudinal electric field (LEF) is always composed of three LEF components along the central channel region (longitudinal corner effect, LCE), contrary to the Diamond (two LEF components) [5] and Octo MOSFETs (three LEF components, not totally inside the central gate region) [8].…”

Section: Introductionmentioning

confidence: 99%

“…The ellipsoidal gate shape is another attempt to try to boost the MOSFETs electrical performance, since the resultant longitudinal electric field (LEF) is always composed of three LEF components along the central channel region (longitudinal corner effect, LCE), contrary to the Diamond (two LEF components) [5] and Octo MOSFETs (three LEF components, not totally inside the central gate region) [8]. The PArallel connection of MOSFETs with Different channel Lengths Effect (PAMDLE) [5][6][7][8] also takes place in the Ellipsoidal MOSFET (EM) structure. Since EM does not present corners, the geometry can increase the breakdown voltage (BV DS ) and Electrostatic Discharge (ESD) robustness, compared to the Diamond (DM), Octo (OM), and Conventional (CM) MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

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An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs

Gimenez

Correia

Neto

et al. 2015

IEEE Electron Device Lett.

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This paper describes the impact of using a new gate geometry (ellipsoidal) rather than the standard one (rectangular) to implement planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs). Our experimental results have been carried out using a 350 nm Bulk Complementary MOS (CMOS) technology node. We show that the proposed layout has been capable of increasing the on-state and saturation drain currents in 2 and 3.2 times, respectively. Additionally, the ellipsoidal MOSFET has been able to reduce the delay time constant by 61%. Therefore, we believe this new layout can be used as an alternative way to implement MOSFETs, boosting their analog electrical performance with an appropriate layout changing.Index Terms-Ellipsoidal layout style, MOSFET, LCE and PAMDLE.

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“…This study focuses on and describes the experimental results of devices defined in #1 and #4 on Table I [5][6][7]. Other devices presented similar tendencies.…”

Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs

Gimenez

Correia

Neto

et al. 2015

IEEE Electron Device Lett.

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“…The experimental results of ION/IOFF ratios of the OSM are influenced by its higher ION values compared to their RSM counterparts (Section III.A) and, mainly, by the reduction of IOFF with the increase of the temperature in comparison to the IOFF values presented by their RSM counterparts, as explained in Section III.B. This is another important difference of the octagonal layout style for implementing SOI MOSFET technology in relation to the hexagonal gate geometry [14,30], because for all temperatures considered, the OSM ION/IOFF ratios are always higher to the ones found in their respective RSM counterparts.…”

Section: Ion/ioff Ratiomentioning

confidence: 99%

“…Four prior experimental studies describe in detail the better electrical performance of the DSM [14,30] and OSM [31,32], mainly regarding analog CMOS ICs applications operating at high-temperature environment, in relation to the traditional rectangular MOSFET counterpart.…”

Section: Introductionmentioning

confidence: 99%

Digital Performance of OCTO Layout Style on SOI MOSFET at High Temperature Environment

Galembeck

Flandre

Renaux

et al. 2019

JICS

Self Cite

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This present paper performs an experimental comparative study of the main digital parameters and figures of merit of the octagonal layout style for the planar Silicon-On-Insulator (SOI) Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET), named OCTO SOI MOSFETs (OSM) in comparison with the typical rectangular one at high temperature environments. The devices were manufactured with the 1 mm SOI (CMOS) technology. The results demonstrate that the OSM is capable of keeping active the Longitudinal Corner Effect (LCE), the PArallel Connection of MOSFETs with Different Channel Lengths Effect (PAMDLE) and the Deactivate the Parasitic MOSFETs of the Bird’s Beak Regions Effect (DEPAMBBRE) at high temperature conditions. Therefore, the OSM is able to continue to have a better electrical performance than the one found in the rectangular SOI MOSFET (RSM) counterparts, regarding the same gate areas and bias conditions. To illustrate, its on-state drain current (ION) and off-state drain current (IOFF) are respectively 186% higher and 64% smaller in relation to its RSM counterparts at high temperature conditions.

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Introduction

Gimenez

Galembeck²

2023

Differentiated Layout Styles for MOSFETs

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Diamond layout style impact on SOI MOSFET in high temperature environment

Cited by 24 publications

References 10 publications

An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs

An Innovative Ellipsoidal Layout Style to Further Boost the Electrical Performance of MOSFETs

Digital Performance of OCTO Layout Style on SOI MOSFET at High Temperature Environment

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