Diamond nitrogen-vacancy centers created by scanning focused helium ion beam and annealing

Huang, Zhihong; Li, W.-D.; Santori, Charles; Acosta, Víctor M.; Faraon, Andrei; Ishikawa, T.; Wu, Wei; Winston, Donald; Williams, R. Stanley; Beausoleil, Raymond G.

doi:10.1063/1.4819339

Cited by 60 publications

(61 citation statements)

References 32 publications

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“…In principle, the HR1 emission lifetime should enable the detection of luminescence from individual defects, while the HR2 center is almost three times weaker in emission due to its relatively long lifetime. Overall, the narrow ZPL emission of HR centers with small phonon coupling and the photo-excitability under a wide spectral range, combined with the large availability of focused He beams for fabrication [16,[25][26][27] represent promising aspects for the application of HR defects in quantum technologies. …”

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confidence: 99%

Photo-physical properties of He-related color centers in diamond

Prestopino

Marinelli

Verona

et al. 2017

Applied Physics Letters

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Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm and 560 nm created in three different diamond substrates upon implantation with 1.3 MeV He + ions and subsequent annealing. The spectral features of the HR centers were studied in an "optical grade" diamond substrate as a function of several physical parameters, namely the measurement temperature, the excitation wavelength and the intensity of external electric fields. The emission lifetimes of the 535 nm and 560 nm lines were also measured by means of time-gated photoluminescence measurements, yielding characteristic decay times of (29 ± 5) ns and (106 ± 10) ns, respectively. The Stark shifting of the HR centers under the application of an external electrical field was observed in a CVD diamond film equipped with buried graphitic electrodes, suggesting a lack of inversion symmetry in the defects' structure. Furthermore, the photoluminescence mapping under 405 nm excitation of a "detector grade" diamond sample implanted at a 1×10 10 cm -2 He + ion fluence enabled to identify the spectral features of both the HR emission lines from the same localized optical spots. The reported results provide a first insight towards the understanding of the structure of He-related defects in diamond and their possible utilization in practical applications. MAIN TEXTColor centers in diamond are appealing physical systems for application in emerging quantum technologies. In recent years, a growing interest in this research field led to the discovery, investigation and fabrication of several classes of impurity-related defects [1][2][3][4][5][6][7][8].The formation of optically active defects in diamond upon He implantation followed by annealing in vacuum was recently reported [9]. The spectral features of these defects consist of two narrow emission lines at 536 nm and 560.5 nm, and a phonon sideband in the 572-630 nm spectral range. Following their initial observation in cathodoluminescence (CL) [10,11], their optical activity was investigated in both photoluminescence (PL) and electroluminescence (EL) [9,12]. The need of understanding the possible formation of stable optically active centers, whose current (and still tentative) attribution is based on He incorporation in the diamond lattice, motivates a further investigation of their opto-physical properties. More specifically, the centers have so far been attributed to the He-vacancy complex [13], and density functional theory calculations demonstrated that both this structure and the interstitial He defect could result in stable complexes in the diamond lattice [14]. Apart from this limited body of works, a systematic set of experimental results on the characterization of the ...

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confidence: 99%

Photo-physical properties of He-related color centers in diamond

Prestopino

Marinelli

Verona

et al. 2017

Applied Physics Letters

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“…In this section, we discuss how N δ-doping [47,51] and ion implantation [52,75,76] or electron irradiation [50] can lead to improved spin coherence. Figure 4 summarizes recently obtained T 2 values for different methods and works.…”

Section: Methods To Improve Tmentioning

confidence: 99%

Nanoscale Sensing Using Point Defects in Single-Crystal Diamond: Recent Progress on Nitrogen Vacancy Center-Based Sensors

et al. 2017

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Individual, luminescent point defects in solids, so-called color centers, are atomic-sized quantum systems enabling sensing and imaging with nanoscale spatial resolution. In this overview, we introduce nanoscale sensing based on individual nitrogen vacancy (NV) centers in diamond. We discuss two central challenges of the field: first, the creation of highly-coherent, shallow NV centers less than 10 nm below the surface of a single-crystal diamond; second, the fabrication of tip-like photonic nanostructures that enable efficient fluorescence collection and can be used for scanning probe imaging based on color centers with nanoscale resolution.

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“…Exposure to a high energetic electronic beam and thermal annealing has lead to increased densities of NV centers while still preserving good

T_{2}

times, but does not allow spatial resolution since NV centers are created through the whole diamond crystal (). Alternatively, low‐energy ion (i.e., helium, carbon) and electron irradiation have shown relative spatial control and long

T_{2}

times, which demonstrates the potential capabilities of these techniques for sensing applications. A common feature among the described techniques is that NV centers are created at remote positions from the radiation‐induced damages, thus leading to better spin properties ().…”

Section: Introductionmentioning

confidence: 99%

“…The additional vacancies created by co‐implantation with ions such as carbon and helium should activate further NV centers from the nitrogen‐implanted region during thermal annealing, thus leading to a higher yield. Recent studies suggest that NV centers can be activated from ingrown nitrogen impurities by helium implantation with relatively high efficiency (10–15% conversion from ingrown nitrogen to NV centers). In this paper, we analyze the areal density of NV centers resulting from combined ion implantation (nitrogen with helium or carbon) in the near‐surface region by means of confocal microscopy technique.…”

Section: Introductionmentioning

confidence: 99%

On the efficiency of combined ion implantation for the creation of near‐surface nitrogen‐vacancy centers in diamond

Oliveira

Momenzadeh

Antonov

et al. 2016

Physica Status Solidi (a)

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The efficiency of co‐implantation of different ion species to generate near‐surface nitrogen‐vacancy (NV) centers in diamond is analyzed by comparing the areal densities of NV centers corresponding to various experimental conditions. In particular, the effect of helium (6keV He2+) and carbon (10keV C+) co‐implantation within a wide range of ion fluences are studied. The total density of NV centers by co‐implantation are shown to be basically a sum of the nitrogen‐induced NV centers and those activated from residual nitrogen impurities present in the substrate (approximately 1ppb) by the excess of vacancies at the carbon‐ and helium‐induced ion tracks. Such low efficiency of the co‐implantation events is discussed considering the model of local clusters of vacancies at each implantation‐induced ion track. This is also experimentally supported by the presence of a photoluminescence (PL) background related to radiation‐induced defects measured within all implanted areas with high carbon and helium ion fluences. Further limits set by the annealing temperature are also discussed.

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Diamond nitrogen-vacancy centers created by scanning focused helium ion beam and annealing

Cited by 60 publications

References 32 publications

Photo-physical properties of He-related color centers in diamond

Photo-physical properties of He-related color centers in diamond

Nanoscale Sensing Using Point Defects in Single-Crystal Diamond: Recent Progress on Nitrogen Vacancy Center-Based Sensors

On the efficiency of combined ion implantation for the creation of near‐surface nitrogen‐vacancy centers in diamond

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