1994
DOI: 10.1149/1.2059364
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Diamond Resistors Fabricated Monolithically on Diamond Film Substrate

Abstract: A novel fabrication process for monolithic, electrically isolated diamond resistors is discussed. Selective growth of p-type diamond resistors on undoped diamond has been accomplished by using SiO~ as a sacrificial, "lift-off" layer. Diamond resistors with linewidths less than i0 ~m exhibited resistivities of i0 to 20 ~l-cm. No measurable leakage between the resistors or to the substrate was observed.

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Cited by 3 publications
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“…Figure 6(b) illustrates the EELS data of the coating layers. The peaks centered at 292.4 eV in spectra obtained from the diamond substrate (area (1), in Figure 6(a), were in line with the σ peak characteristics of Chemical vapor deposition (CVD) synthetic diamond [16]. As plotted in Figure 6(b), the K-edge fine structures of B and carbon, acquired from the position of 3-9 (Figure 6(b)), were found consistent with previous findings of B and carbon K-edge in B 4 C [17,18].…”
Section: Microstructure Of Composite Coatings/diamond Particlessupporting
confidence: 64%
“…Figure 6(b) illustrates the EELS data of the coating layers. The peaks centered at 292.4 eV in spectra obtained from the diamond substrate (area (1), in Figure 6(a), were in line with the σ peak characteristics of Chemical vapor deposition (CVD) synthetic diamond [16]. As plotted in Figure 6(b), the K-edge fine structures of B and carbon, acquired from the position of 3-9 (Figure 6(b)), were found consistent with previous findings of B and carbon K-edge in B 4 C [17,18].…”
Section: Microstructure Of Composite Coatings/diamond Particlessupporting
confidence: 64%