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Polycrystalline diamond film (PDF) is known for its high power, high temperature, and radiation hard potential. The interest in piezoresistivity of PDF is that it is a candidate for high temperature sensing (e.g., pressure sensor).Piezoresistivity measurements were taken of boron-doped PDF grown by microwave-plasma chemical vapor deposition(CVD). Three substrates, silicon, aluminum nitride and tungsten were used. Films were detached from these substrates, then attached to a ceramic substrate. The piezoresistivity varies, dependent on the original host substrate. For example, at room temperature, the PDF film from tungsten has a greater gauge factor, around 75. The carrier activation energy of this film, determined from log R(l/T), was nominally 0.25eV.Combining thick film technology and CVD processes, patterned B-doped PDF has been achieved monolithically on A1N substrates. The characteristics of this configuration is being investigated and will be presented.

A novel fabrication process for monolithic, electrically isolated diamond resistors is discussed. Selective growth of p-type diamond resistors on undoped diamond has been accomplished by using SiO~ as a sacrificial, "lift-off" layer. Diamond resistors with linewidths less than i0 ~m exhibited resistivities of i0 to 20 ~l-cm. No measurable leakage between the resistors or to the substrate was observed.

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