Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM

Lloret, F.; Araújo, D.; Villar, M. P.; Rodríguez-Madrid, J.G.; Iriarte, G.F.; Williams, Oliver A.; Calle, F.

doi:10.1016/j.mee.2013.04.007

Cited by 10 publications

(6 citation statements)

References 26 publications

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“…The SEM image indicates that the prepared thin film had a visible columnar structure that grew perpendicular to the substrate. This columnar-like growth was similar to the columnar microstructure of pure AlN [ 28 ]. It can be observed that the SAlN thin film had a good crystalline quality and a clear grain boundary.…”

Section: Resultssupporting

confidence: 64%

Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices

et al. 2021

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In this work, we systematically studied the deposition, characterization, and crystal structure modeling of ScAlN thin film. Measurements of the piezoelectric device’s relevant material properties, such as crystal structure, crystallographic orientation, and piezoelectric response, were performed to characterize the Sc0.29Al0.71N thin film grown using pulsed DC magnetron sputtering. Crystal structure modeling of the ScAlN thin film is proposed and validated, and the structure–property relations are discussed. The investigation results indicated that the sputtered thin film using seed layer technique had a good crystalline quality and a clear grain boundary. In addition, the effective piezoelectric coefficient d33 was up to 12.6 pC/N, and there was no wurtzite-to-rocksalt phase transition under high pressure. These good features demonstrated that the sputtered ScAlN is promising for application in high-coupling piezoelectric devices with high-pressure stability.

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Section: Resultssupporting

confidence: 64%

Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices

et al. 2021

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“…It has been reported that the preferred orientation of AlN thin films deposited on diamond or sapphire by reactive magnetron sputtering or metal organic chemical vapor deposition (MOCVD) can achieve the acoustic velocity larger than 10,000 m/s. [15,16,17]. However, these materials have either high fabrication cost or low electromechanical coupling coefficient (EMCC).…”

Section: Introductionmentioning

confidence: 99%

Fabrications of L-Band LiNbO3-Based SAW Resonators for Aerospace Applications

Zhang

et al. 2019

Micromachines

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High frequency surface acoustic wave (SAW) technology offers many opportunities for aerospace applications in passive wireless sensing and communication. This paper presents the design, simulation, fabrication, and test of an L-band SAW resonator based on 128° Y-X LiNbO3 substrate. The design parameters of SAW resonator were optimized by the finite element (FEM) method and the coupling-of-mode (COM) theory. Electron-beam lithography (EBL) technology was used to fabricate the submicron-scale of interdigital transducers (IDTs) and grating reflectors. The effects of some key EBL processes (e.g., the use of electron beam resist, the choice of metal deposition methods, the charge-accumulation effect, and the proximity-effect) on the fabrication precision of SAW devices were discussed. Experimentally, the LiNbO3-based SAW resonators fabricated using improved EBL technology exhibits a Rayleigh wave resonance peaks at 1.55 GHz with return loss about −12 dB, and quality factor Q is 517. Based on this SAW resonator, the temperature and strain sensing tests were performed, respectively. The experimental results exhibit a well linear dependence of temperature/strain on frequency-shift, with a temperature sensitivity of 125.4 kHz/°C and a strain sensitivity of −831 Hz/με, respectively.

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“…Most research currently focuses on factors in the optimization of the AlN preparation process, such as the Ar/N 2 ratio, deposition temperature, deposition pressure, doped element, type of power supply, and so on. However, the properties of substrates also have a marked impact on the orientation growth of AlN films . In fact, the different properties of substrates and the preparation process will lead to different behaviors of AlN growth in the early stage, which will change the interface structure between AlN and the matrix, affecting the overall properties of AlN film.…”

Section: Introductionmentioning

confidence: 99%

“…In fact, the different properties of substrates and the preparation process will lead to different behaviors of AlN growth in the early stage, which will change the interface structure between AlN and the matrix, affecting the overall properties of AlN film. Some researchers pointed out that there is a transition region at the early stage of AlN nucleation, where the orientation of AlN grains is disordered. However, further effort is required to understand and better control the evolution of this region.…”

Section: Introductionmentioning

confidence: 99%

Orientation of AlN Grains Nucleated on Different Diamond Substrates by Magnetron Sputtering

Líu

Zhang

et al. 2018

Physica Status Solidi (a)

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For AlN/diamond structure, the crystal quality of diamond substrates is of great importance for the epitaxial growth of AlN. In this paper, c-axis-oriented AlN films are deposited on diamond with different crystal quality by radio frequency (RF) reactive magnetron sputtering. The effects of the microstructure of diamond substrates on the orientation of AlN are studied. The results show that the crystal quality of the diamond films greatly affects the growth behavior of AlN. The surface defects of diamond, such as the amorphous phase, will cause the growth direction of AlN to deviate from the c-axis, resulting in the disorder of grain orientation. Meanwhile, diamond crystal orientation also has influence on the growth of AlN. The (111) oriented grains of diamond are beneficial to the c-axis growth of AlN. The interface of AlN nucleation and initial growth plays a vital role in final performance of the films, where there is a transition zone from randomly oriented AlN grains to c-axis-oriented grains. The suitable diamond substrate can eliminate the transition zone, and can lead to AlN films with high-degree c-axis orientation.

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Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM

Cited by 10 publications

References 26 publications

Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices

Deposition, Characterization, and Modeling of Scandium-Doped Aluminum Nitride Thin Film for Piezoelectric Devices

Fabrications of L-Band LiNbO3-Based SAW Resonators for Aerospace Applications

Orientation of AlN Grains Nucleated on Different Diamond Substrates by Magnetron Sputtering

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