Die Attach Materials for High Temperature Applications: A Review

Manikam, Vemal Raja; Cheong, Kuan Yew

doi:10.1109/tcpmt.2010.2100432

Cited by 415 publications

(136 citation statements)

References 57 publications

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“…Interest in sintered Ag joints can be attributed to their several advantages, such as a processing temperature similar to that of current high-lead solders, high thermal stability and conductivity, and superior mechanical and electrical properties compared with other lead-free alternatives in the market. 1,2 This trend coincides with the proliferation of power semiconductor devices, such as silicon carbide and gallium nitride, which require interconnect materials to operate at high switching speeds, high current densities, and junction temperatures of more than 200°C. 3,4 In such a harsh environment, a sintered Ag joint is one of the few viable options because its high melting temperature implies a stable mechanical joint with a low homologous temperature (%0.3 T m ).…”

Section: Introductionmentioning

confidence: 88%

Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?

Siow

2014

Journal of Elec Materi

278

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Silver (Ag) has been under development for use as interconnect material for power electronics packaging since the late 1980s. Despite its long development history, high thermal and electrical conductivities, and lead-free composition, sintered Ag technology has limited market penetration. This review sets out to explore what is required to make this technology more viable. This review also covers the origin of sintered Ag, the different types and application methods of sintered Ag pastes and laminates, and the long-term reliability of sintered Ag joints. Sintered Ag pastes are classified according to whether pressure is required for sintering and further classified according to their filler sizes. This review discusses the main methods of applying Ag pastes/laminates as dieattach materials and the related processing conditions. The long-term reliability of sintered Ag joints depends on the density of the sintered joint, selection of metallization or plating schemes, types of substrates, substrate roughness, formulation of Ag pastes/laminates, joint configurations (i.e., joint thicknesses and die sizes), and testing conditions. This paper identifies four challenges that must be overcome for the proliferation of sintered Ag technology: changes in materials formulation, the successful navigation of the complex patent landscape, the availability of production and inspection equipment, and the health concerns of Ag nanoparticles. This paper is expected to be useful to materials suppliers and semiconductor companies that are considering this technology for their future packages.

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Section: Introductionmentioning

confidence: 88%

Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?

Siow

2014

Journal of Elec Materi

278

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“…They require specific assembly technologies, such as ceramic substrates, high temperature solders, etc. In particular, component attaches rely either on gold-based solder alloys, or on silver sintering [3,4]. This paper focuses on temperatures ranges up to 175°C, where it is desirable and conceivable to use more standard technologies such as PCBs and lead-free solders.…”

Section: Review Of High-temperature Microelectronics Assembliesmentioning

confidence: 99%

High temperature ageing of microelectronics assemblies with SAC solder joints

Sabbah

Bondue

Aviñó-Salvadó

et al. 2017

Microelectronics Reliability

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“…Die packaging plays an important role in connecting die to the external circuit of the board, creating a path to remove the heat generated by the devices during its electrical operation, and protecting the die from the external environment such as moisture, dust, etc [12]. Many of the reliability issues of power devices are either related to excessive temperature or thermal fatigue due to electrical cycling.…”

Section: Package Die Area Estimationmentioning

confidence: 99%

SiC Based Single Chip Programmable AC to DC Power Converter

Pratap¹,

Agarwal²,

S³

2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-A single chip Programmable AC to DC Power Converter, consisting of wide band gap SiC MOSFET and SiC diodes, has been proposed which converts high frequency ac voltage to a conditioned dc output voltage at user defined given power level. The converter has high conversion efficiency because of negligible reverse recovery current in SiC diode and SiC MOSFET. High frequency operation reduces the need of bigger size inductor. Lead inductors are enough to maintain current continuity. A complete electrical analysis, die area estimation and thermal analysis of the converter has been presented. It has been found that settling time and peak overshoot voltage across the device has reduced significantly when SiC devices are used with respect to Si devices. Reduction in peak overshoot also increases the converter efficiency. The total package substrate dimension of the converter circuit is only 5 mm × 5 mm. Thermal analysis performed in the paper shows that these devices would be very useful for use as miniaturized power converters for load currents of up to 5-7 amp, keeping the package thermal conductivity limitation in mind. The converter is ideal for voltage requirements for sub-5 V level power supplies for high temperatures and space electronics systems.

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Die Attach Materials for High Temperature Applications: A Review

Cited by 415 publications

References 57 publications

Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?

Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging?

High temperature ageing of microelectronics assemblies with SAC solder joints

SiC Based Single Chip Programmable AC to DC Power Converter

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