Dielectric breakdown and Poole–Frenkel field saturation in silicon oxynitride thin films

Habermehl, S.; Apodaca, Roger

doi:10.1063/1.1865338

Cited by 21 publications

(12 citation statements)

References 19 publications

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“…For SiO x N y films the, data are listed in Tables I and II in Ref. 11. Figure 1 shows that the field saturation condition determining the barrier lowering energy at breakdown holds also for SiN x films and follows the relationship observed for SiO x N y films.…”

supporting

confidence: 52%

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On dielectric breakdown in silicon-rich silicon nitride thin films

Habermehl

Apodaca

Kaplar

2009

Applied Physics Letters

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supporting

confidence: 52%

“…2 in Ref. 11 and includes the data that depict the correlation for SiO x N y films. The data used in Fig.…”

mentioning

confidence: 99%

On dielectric breakdown in silicon-rich silicon nitride thin films

Habermehl

Apodaca

Kaplar

2009

Applied Physics Letters

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“…For this thickness, the onset voltage is very high (>50 V). Such high voltages, favors the injection of high-energy hot electrons [39,40], which is known to induce dielectric breakdown.…”

Section: Conductivity-electroluminescence Correlationmentioning

confidence: 99%

Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions

Cueff¹,

Labbé²,

Jambois³

et al. 2012

Opt. Express

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Abstract:We present an analysis of factors influencing carrier transport and electroluminescence (EL) at 1.5 µm from erbium-doped silicon-rich silica (SiO x ) layers. The effects of both the active layer thickness and the Siexcess content on the electrical excitation of erbium are studied. We demonstrate that when the thickness is decreased from a few hundred to tens of nanometers the conductivity is greatly enhanced. Carrier transport is well described in all cases by a Poole-Frenkel mechanism, while the thickness-dependent current density suggests an evolution of both density and distribution of trapping states induced by Si nanoinclusions. We ascribe this observation to stress-induced effects prevailing in thin films, which inhibit the agglomeration of Si atoms, resulting in a high density of sub-nm Si inclusions that induce traps much shallower than those generated by Si nanoclusters (Si-ncs) formed in thicker films. There is no direct correlation between high conductivity and optimized EL intensity at 1.5 µm. Our results suggest that the main excitation mechanism governing the EL signal is impact excitation, which gradually becomes more efficient as film thickness increases, thanks to the increased segregation of Si-ncs, which in turn allows more efficient injection of hot electrons into the oxide matrix. Optimization of the EL signal is thus found to be a compromise between conductivity and both number and degree of segregation of Si-ncs, all of which are governed by a combination of excess Si content and sample thickness. This material study has strong implications for many electricallydriven devices using Si-ncs or Si-excess mediated EL. USSR 5, 685-687 (1938). ©2012 Optical Society of America

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“…At some point, these charge traps form a percolation path leading to a spike in the current across the membrane. 127,128 This increase in current results in physical damage to the dielectric, potentially as a result of significant Joule heating. However, it should be noted that the situation is somewhat more complex for CBD since here the electric field is applied via an electrolyte solution.…”

Section: Controlled Breakdownmentioning

confidence: 99%