Dielectric functions of a growing silver film determined using dynamic in situ spectroscopic ellipsometry

Oates, Thomas W.; Ryves, L.; Bilek, M.M.M.

doi:10.1364/oe.16.002302

Cited by 38 publications

(33 citation statements)

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“…45 Therefore, v = 10 11 S −1 for room-temperature deposition, or v = 10 13 S −1 for deposition around 500°C. Shklyav et al 41 calculated and observed an island density of n = 10 12 cm −1 for Ge on SiO 2 deposition performed in the 500°C range; therefore, we would expect an island density of approximately n = 10 12 × 500/25 = 2 × 10 13 cm −1 for our room-temperature deposition. It has been reported 46 that Ge atoms segregate into Ag grain boundaries and tend to concentrate on the Ag free surface due to grain boundaries of Ag films providing sites where Ge solute atoms have lower Gibbs free energy than on the Ge-SiO 2 interface.…”

Section: ■ Results and Discussionmentioning

confidence: 70%

Phenomenological Model of the Growth of Ultrasmooth Silver Thin Films Deposited with a Germanium Nucleation Layer

et al. 2015

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The structural properties of optically thin (15 nm) silver (Ag) films deposited on SiO2/Si(100) substrates with a germanium (Ge) nucleation layer were studied. The morphological and crystallographical characteristics of Ag thin films with different Ge nucleation layer thicknesses were assessed by cross-sectional transmission electron microscopy (XTEM), reflection high-energy electron diffraction (RHEED), X-ray diffractometry (XRD), grazing incidence X-ray diffractometry (GIXRD), X-ray reflection (XRR), and Fourier transform infrared spectroscopy (FTIR). The surface roughness of Ag thin films was found to decrease significantly by inserting a Ge nucleation layer with a thickness in the range of 1 to 2 nm (i.e., smoothing mode). However, as the Ge nucleation layer thickness increased beyond 2 nm, the surface roughness increased concomitantly (i.e., roughing mode). For the smoothing mode, the role of the Ge nucleation layer in the Ag film deposition is discussed by invoking the surface energy of Ge, the bond dissociation energy of Ag-Ge, and the deposition mechanisms of Ag thin films on a given characteristic Ge nucleation layer. Additionally, Ge island formation, the precipitation of Ge from Ag-Ge alloys, and the penetration of Ge into SiO2 are suggested for the roughing mode. This demonstration of ultrasmooth Ag thin films would offer an advantageous material platform with scalability for applications such as optics, plasmonics, and photonics.

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Section: ■ Results and Discussionmentioning

confidence: 70%

Phenomenological Model of the Growth of Ultrasmooth Silver Thin Films Deposited with a Germanium Nucleation Layer

et al. 2015

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“…20,[24][25][26]29,30,46 The samples were subsequently measured more extensively ex situ with a J. A. Woollam Co., Inc. VASE system to collect angle-and energy-resolved VAMM and scattering spectra.…”

Section: Acs Photonicsmentioning

confidence: 99%

Ultraviolet–Visible Plasmonic Properties of Gallium Nanoparticles Investigated by Variable-Angle Spectroscopic and Mueller Matrix Ellipsometry

et al. 2014

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Self-assembled, irregular ensembles of hemispherical Ga nanoparticles (NPs) were deposited on sapphire by molecular beam epitaxy. These samples, whose constituent unimodal or bimodal distribution of NP sizes was controlled by deposition time, exhibited localized surface plasmon resonances tunable from the ultraviolet to the visible (UV/ vis) spectral range. The optical response of each sample was characterized using a variable-angle spectroscopic ellipsometer, and the dielectric response of the ensemble of NPs on each sample was parametrized using Lorentz oscillators. From this, a relationship was found between NP size and the deduced Lorentzian parameters (resonant frequency, damping, oscillator strength) for most unimodal and bimodal samples at most frequencies and angles of incidence. However, for samples with a bimodal size distribution, Mueller matrix ellipsometry revealed nonspecular scattering at particular frequencies and angles, suggesting a resonant interparticle coupling effect consistent with recently observed strong local field enhancements in the ultraviolet. KEYWORDS: plasmonics, ultraviolet, gallium, nanoparticles, variable-angle spectroscopic ellipsometry, variable-angle Mueller matrix ellipsometry R esearch into the optical response of confined electronic plasma oscillations in metallic nanostructures has become the foundation of modern plasmonics. Metallic nanostructures are routinely fabricated with desired spatial geometries for specific applications including single-molecule detection, enhanced fluorescence, toxic remediation, and catalysis. 1−6 Because the optical response depends sensitively on nanostructure composition, size, and shape, increasingly sophisticated characterization tools are required: aggregate behavior may be characterized by absorption spectroscopy or dark-field microscopy, while single-particle behavior may be characterized by confocal microscopy, near-field scanning optical microscopy, and cathodoluminescence. 7−12 These tools provide incredibly detailed understanding of the absorption and scattering properties of plasmonic metal nanoparticles, especially when complemented by sophisticated electromagnetic modeling techniques such as finite difference time domain, finite element codes, and the discrete dipole approximation. 13−19 Of growing interest is the need to monitor the plasmonic properties of substrate-supported nanoparticle (NP) ensembles during fabrication. Because it is impractical to use single-particle imaging tools for this application, advances in the more traditional tools are needed to understand single-particle behaviors from aggregate measurements. Spectroscopic ellipsometry (SE) has been used to monitor how NP ensembles alter the polarization state of an incident light beam as a function of wavelength and incidence angle. 20−24 Recently, a fixed incidence angle spectroscopic ellipsometer mounted on a molecular beam epitaxy (MBE) chamber has been used to monitor in real time the deposition of nanometer-scale metallic films and NPs through...

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“…As examples of recent applications of spectroscopic ellipsometry: The dielectric functions of plasma deposited silver on SiO 2 through all stages of Volmer-Weber growth at room temperature and 150 C were determined unambiguously by applying a model-independent inversion method to dynamic in situ spectroscopic ellipsometric data (Oates et al 2008).…”

Section: Introductionmentioning

confidence: 99%

An Improvement of Scanning Ellipsometer by Rotating a Polarizer and an Analyzer at a Speed Ratio of 1:3

El-Agez¹,

Taya²,

Tayyan³

2011

International Journal of Optomechatronics

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We propose theoretically an improved spectroscopic ellipsometer to study the optical properties of solids. In this system, the polarizer and the analyzer are rotating synchronously in the same direction at a speed ratio 1:3. The light intensity received by the detector contains six Fourier coefficients, one dc and five ac. One can independently extract the ellipsometric parameters as well as the optical constants of a sample using any of six different sets of the Fourier coefficients. A comparison among these sets is presented to find the optimal set corresponding to the minimum percent error in the calculation of the real and imaginary parts of the dielectric function. The results from the simulated spectra of the complex refractive index of c-Si, ZnSe, and GaP are presented.

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Dielectric functions of a growing silver film determined using dynamic in situ spectroscopic ellipsometry

Cited by 38 publications

References 0 publications

Phenomenological Model of the Growth of Ultrasmooth Silver Thin Films Deposited with a Germanium Nucleation Layer

Phenomenological Model of the Growth of Ultrasmooth Silver Thin Films Deposited with a Germanium Nucleation Layer

Ultraviolet–Visible Plasmonic Properties of Gallium Nanoparticles Investigated by Variable-Angle Spectroscopic and Mueller Matrix Ellipsometry

An Improvement of Scanning Ellipsometer by Rotating a Polarizer and an Analyzer at a Speed Ratio of 1:3

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