Microstructure evolution as a function of the substrate temperature and metal content of C:Ni nanocomposite films grown by hyperthermal ion deposition is investigated. The films were grown by pulsed filtered cathodic vacuum arc on thermally oxidized Si substrates held at temperatures in the range from room temperature (RT) to 500 °C and with the metal content ranging from 7 to 40 at. %. The elemental depth profiles and composition were determined by elastic recoil detection analysis. The film morphology and phase structure were studied by means of cross-sectional transmission electron microscopy and selected area electron diffraction. For RT deposition a transition from repeated nucleation dominated toward self-organized growth of alternating carbon and crystalline nickel carbide layers is observed at a Ni threshold content of ∼40 at. %. The surface diffusion increases concomitantly with the growth temperature resulting in the formation of elongated/columnar structures and a complete separation of the film constituents into the coexisting carbon and fcc Ni phases. At the highest growth temperature (500 °C) Ni shows a tendency to segregate at the surface of the growing film and to form a continuous layer for integrated Ni contents of ≥30 at. %. A corresponding structure zone model diagram is presented, and the results are discussed on the basis of the ion induced atomic displacement, temperature activated adatom diffusion, and the metallic island coalescence processes whose complex interplay results in the observed variety of the microstructures.

The dielectric functions of plasma deposited silver on SiO2 through all stages of Volmer-Weber growth at room temperature and 150 degrees C were determined unambiguously by applying a model-independent inversion method to dynamic in situ spectroscopic ellipsometric data. The results show large differences in the localized plasmon resonance and the percolation threshold at the two temperatures. Using these model-independent dielectric functions we assess the effectiveness of modelling the plasmon resonance by fitting a Lorentz oscillator. The methods show agreement for the position of the plasmon resonance below the percolation threshold and for the effective film thickness up to 5.6 nm at room temperature and 11.5 nm at 150 degrees C, however the line shape of the resonance is described by the Lorentzian only in the early stages of film growth.

A multicathode high current pulsed cathodic arc has been used to deposit Ti2AlC thin films belonging to the group of nanolaminate ternary compounds of composition Mn+1AXn. The required stoichiometry was achieved by means of alternating plasma pulses from three independent cathodes. We present x-ray diffraction and transmission electron microscopy analysis showing that epitaxial single phase growth of Ti2AlC has been achieved at a substrate temperature of 900 °C. Our results demonstrate a powerful method for MAX phase synthesis, allowing for phase tuning within the Mn+1AXn system.

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