“…In these heterostructures the QW is located close to vacuum and the semiconductor-vacuum interface, which is parallel to the well plane, introduces a remarkable discrepancy in the dielectric constant resulting in a significant enhancement of the exciton binding energy [11,12]. More recently, a basic phenomenon such as dielectric mismatch effect on the electronic energy levels, impurity states and excitonic absorption spectra in various semiconductor nanostructures [13][14][15], including InGaAs/GaAs symmetrical NSQWs [16], has been investigated.…”