2010
DOI: 10.1016/j.physe.2010.06.031
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Dielectric mismatch in finite barrier cubic quantum dots

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Cited by 8 publications
(1 citation statement)
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“…In these heterostructures the QW is located close to vacuum and the semiconductor-vacuum interface, which is parallel to the well plane, introduces a remarkable discrepancy in the dielectric constant resulting in a significant enhancement of the exciton binding energy [11,12]. More recently, a basic phenomenon such as dielectric mismatch effect on the electronic energy levels, impurity states and excitonic absorption spectra in various semiconductor nanostructures [13][14][15], including InGaAs/GaAs symmetrical NSQWs [16], has been investigated.…”
Section: Introductionmentioning
confidence: 99%
“…In these heterostructures the QW is located close to vacuum and the semiconductor-vacuum interface, which is parallel to the well plane, introduces a remarkable discrepancy in the dielectric constant resulting in a significant enhancement of the exciton binding energy [11,12]. More recently, a basic phenomenon such as dielectric mismatch effect on the electronic energy levels, impurity states and excitonic absorption spectra in various semiconductor nanostructures [13][14][15], including InGaAs/GaAs symmetrical NSQWs [16], has been investigated.…”
Section: Introductionmentioning
confidence: 99%