Dielectric properties and energy-storage performances of (1 − x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 relaxor ferroelectric thin films

Wang, Xiaolin; Zhang, Liwen; Hao, Xihong; An, Shengli; Song, Bo

doi:10.1007/s10854-015-3621-z

Cited by 29 publications

(12 citation statements)

References 33 publications

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“…5 to a field magnitude of 10 6 V/cm. The extrapolated efficiency η ≈ 65% and recoverable density U recov ≈ 5 J/cm 3 of the BTO capacitor are within the ranges reported for many high-performance Pb-containing and Pb-free thin films 40–42 . We note that quasi-static density U recov is larger than that at 1 kHz and that quasi-static U recov = U store leading to η = 100% (Supplementary Fig.…”

Section: Resultssupporting

confidence: 80%

Perovskite ferroelectric tuned by thermal strain

Tyunina

Pacherová

Peräntie

et al. 2019

Sci Rep

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Modern environmental and sustainability issues as well as the growing demand for applications in the life sciences and medicine put special requirements to the chemical composition of many functional materials. To achieve desired performance within these requirements, innovative approaches are needed. In this work, we experimentally demonstrate that thermal strain can effectively tune the crystal structure and versatile properties of relatively thick films of environmentally friendly, biocompatible, and low-cost perovskite ferroelectric barium titanate. The strain arises during post-deposition cooling due to a mismatch between the thermal expansion coefficients of the films and the substrate materials. The strain-induced in-plane polarization enables excellent performance of bottom-to-top barium titanate capacitors akin to that of exemplary lead-containing relaxor ferroelectrics. Our work shows that controlling thermal strain can help tailor response functions in a straightforward manner.

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Section: Resultssupporting

confidence: 80%

Perovskite ferroelectric tuned by thermal strain

Tyunina

Pacherová

Peräntie

et al. 2019

Sci Rep

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“…It is evident that there is a minimal temperature dependence for W r , while η decreases slightly at high temperatures but still retains values of η >80%. Figure compares the energy density W r and efficiency η at 175°C of the 110‐textured 10BSBT films with those of other materials . It can be observed that the 10BSBT films provide an optimum combination of W r and η at high temperatures and therefore are an attractive option for high‐energy‐storage capacitor applications that are intended for temperatures of 140°C and above.…”

Section: Resultsmentioning

confidence: 97%

“…Comparison of recoverable energy storage density ( W r ) and efficiency ( η ) of 110‐textured 10BSBT films with respect to other Pb‐based and Pb‐free thin films…”

Section: Resultsmentioning

confidence: 99%

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High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films

Abbas

Pramanick

2020

J Am Ceram Soc

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The development of thin film dielectrics having both high energy density and energy conversion efficiency, as well as good thermal stability, is necessary for practical application in high‐temperature power electronics. In addition, there is a demand for the development of new Pb‐free high‐energy density dielectric materials due to environmental concerns. In this regard, thin films of weakly coupled relaxors based on solid solutions of BaTiO3–BiMeO3 have shown good promise, because they exhibit a remarkably large polarization over a wide temperature range. Nevertheless, the performance of Pb‐free thin films has lagged behind that of their Pb‐based counterparts in terms of thermal stability and energy conversion efficiency. Toward this end, most recent studies on BaTiO3–BiMeO3 systems have focused on the optimization of material composition, while relatively less attention has been paid to other aspects such as defect chemistry and crystallographic texture. In this study, we examine the effects of A‐site vacancy and crystallographic texture on the energy storage performance of BaTiO3–BiScO3 thin films synthesized using pulsed laser deposition (PLD). It is shown that a high energy storage density (Wr) of ~28.8 J/cm3 and a high efficiency of η >90% are achieved through a combination of moderate A‐site vacancy concentration and (110) crystallographic texture. Furthermore, Wr remains nearly temperature independent while a high efficiency of η >80% is maintained for temperatures up to 200°C, which constitutes one of the best performances for Pb‐free ferroelectric films for high‐temperature capacitor applications.

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“…For example, with the introduction of Bi(Mg 1/2 Ti 1/2) O 3 into (Na 1/2 Bi 1/2 ) 0.92 Ba 0.08 TiO 3 ceramics, high U e (>2 J cm −3 ) and excellent η (>88%) were obtained from 25 to 180°C [64]. [68].…”

Section: High-temperature Linear/paraelectric Dielectricsmentioning

confidence: 99%

Dielectric materials for high‐temperature capacitors

Fan

Liu

Yang

et al. 2018

IET Nanodielectrics

164

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Dielectric materials with excellent energy storage capability at elevated temperatures are critical to meet the increasing demand of electrical energy storage and power conditioning at extreme conditions such as hybrid electric vehicles, underground oil industries and aerospace systems. This review study summarises the important aspects and recent advances in the development of nanostructured dielectric materials including ceramics, polymers and polymer composites for hightemperature capacitor applications. The advantages and limitations of current dielectric materials are discussed and analysed. Ongoing research strategies to suppress the conduction loss and optimise the high-temperature capacitive performance of dielectrics have been highlighted. A summary and outlook will conclude this review.

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Dielectric properties and energy-storage performances of (1 − x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 relaxor ferroelectric thin films

Cited by 29 publications

References 33 publications

Perovskite ferroelectric tuned by thermal strain

Perovskite ferroelectric tuned by thermal strain

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films

Dielectric materials for high‐temperature capacitors

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Dielectric properties and energy-storage performances of (1 − x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 relaxor ferroelectric thin films

Cited by 29 publications

References 33 publications

Perovskite ferroelectric tuned by thermal strain

Perovskite ferroelectric tuned by thermal strain

High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO3–BiScO3 thin films

Dielectric materials for high‐temperature capacitors

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Product

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High energy storage efficiency and thermal stability of A‐site‐deficient and 110‐textured BaTiO₃–BiScO₃ thin films