Dielectric Properties of Ba(Ti_0.85Zr_0.15)O₃Film Prepared by Metalorganic Chemical Vapor Deposition

Abstract

Ba(Ti 0:85 Zr 0:15 )O 3 films were prepared at 973 K on (100)Pt/(100)MgO substrates by metalorganic chemical vapor deposition (MOCVD), and their dielectric properties were investigated. The dielectric constant (" 0 ) of the film changed depending on the ac electric field (E ac ) and frequency at temperatures below 400 K. The " 0 showed a broad maximum at a specific temperature (T M ) that decreased from 370 to 330 K with increasing E ac from 0:15 Â 10 5 to 15 Â 10 5 VÁm À1 . The film exhibited ferroelectric characteristics with remanent polarization (2P r ) of 3 Â 10 À2 CÁm À2 and coercive field (2E C ) of 14 Â 10 5 VÁm À1 .

Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates

“…This, combined with the diffuse nature of the phase transition, suggests relaxor behavior. This data are consistent with that measured by other groups on thin films of barium titanate zirconate deposited on refractory substrates 11 With the focus of this work aimed toward the development of embedded decoupling capacitors, it is important to understand how leakage current density is affected by zirconium content. At a dc field of 150 kV/cm the leakage current densities range from between 10 −6 and 10 −4 amps/cm 2 .…”

“…9 Several groups have investigated the dielectric and relaxor properties of this material in a thin film embodiment. 1,[10][11][12] Most of this work however, has utilized depositions of films on refractory or noble metal substrates. While practical for many applications, these substrate materials can impart limitations on other uses where substrate conformality, conductivity, or cost may be a factor.…”

Impact of layer defects in ferroelectric thin films

“…There is also an increasing interest in studying defects and their related strain fields in ferroelectrics (FE), in particular in low dimensional systems [1]. A broad variety of defects have been implemented and analyzed mainly in ABO 3 -type FE, such as BaTiO 3 and Pb(Zr,Ti)O 3 (PZT) [1,2,3,4], bismuth layer-structured FE, such as Bi 4 Ti 3 O 12 (BTO) [5,6,7,8] as well as SrBi 2 Ta 2 O 9 (SBT) [9,10,11]. To control the polarization and piezoelectric properties, PZT is often modified by various elements of lower valency (K, Mn, Fe) and higher talent (La, Nb, Ta) cations.…”

“…Based on the extensive research before on ferroelectrics (FEs), especially on FE thin films, and due to their suitability for applications in nonvolatile FE random access memories (FERAMs) [7], there is a further increasing interest in studying defects and their related FE strain fields, in particular in low dimensional systems [8]. A broad variety of defects have been implemented and analysed mainly in ABO 3 -type FEs, such as BaTiO 3 , PZT [8][9][10][11], and bismuth layer-structured FEs, such as Bi 4 Ti 3 O 12 (BTO) [12][13][14][15] as well as SrBi 2 Ta 2 O 9 (SBT) [16][17][18]. To control the polarization and the piezoelectric properties, PZT is often modified by various elements of lower valency (K, Mn, Fe) and higher valency (La, Nb, Ta) cations.…”

Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

“…Perovskite oxides such as CaCu 3 Ti 4 O 12 (CCTO), [40] BaTi (1-x) Zr x O 3 (BTZ), [41,42] SrTiO 3 , [43] LaAlO 3 , [44] and Pb(Mg 1/3 Nb 2/3 )O 3 (PMN) [45] have also been synthesized as thin films through MOCVD on single-crystal substrates to be exploited in various microelectronic and optoelectronic fields due to their high dielectric constant (ε) values.…”