Dielectric properties of Pb(In 1/2 Nb 1/2 )O 3 –Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 film by aerosol deposition for energy storage applications

Excellent ferroelectric and pyroelectric performance of rhombohedral Mn‐doped PIMNT thin films with (111) orientation

“…The dielectric properties of the films showed a relaxation‐type behavior, this behavior was attributed to polydomain structure, higher preferred orientation, grain size, and mechanical stress from substrate clamping. Furthermore, a large amount of literature reported that the tan δ of the films was an order of magnitude higher than that of the bulk 14,15 …”

“…A summary of the ferroelectric properties of Mn-PIMNT(36/36/28) and other lead-based films are shown in Table 2. [8][9][10]13,14 The values of P r and E C were much larger than the [111]-oriented Mn-PIMNT(36/36/28) crystals (P r = 38 μC cm −2 and E C = 12 kV cm −1 ). 5 In addition, its P r was more than 9 times higher than the ternary PIMNT(30/38/32) thin films grown on (110)-oriented MgO substrates.…”

“…14 Therefore, scientists put a lot of effort to solve these problems and improve electrical performance in recent years. [12][13][14] A previous study reported that (111)-oriented Mndoped rhombohedral PIMNT(36/36/28) crystal exhibited both excellent pyroelectric properties and thermal stability compared to PMNT and PIMNT, indicating its potential applications in uncooled infrared detectors. 5 Compared with single crystals, thin films have unique advantages for the development of uncooled infrared focal plane arrays (UFPA) with high-integration, high-sensitivity, and lowpower.…”

“…Although Kang et al fabricated a PIMNT (24/43/33) film which exhibited a high curie temperature ( T C ) of 255℃ by using aerosol deposition (AD) and annealing processes, the films resulted in poor deposition uniformity and large leakage current 14 12–14 …”

Piezoelectric Thick Film Deposition via Powder/Granule Spray in Vacuum: A Review

“…After annealing, the AD film of 65PMN-35PT revealed a U of 35 J/cc and η of 70% at a 2000 kV/cm electric field (Figure 30c). Kang et al [77] also reported a temperature-independent energy density for PIN-PMN-PT thick films fabricated via AD. Jung et al [78] reported a high recoverable U for Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 -Bi(Zn 0.66 Nb 0.33 O 3 ) (PLZT-BZN) mixed systems fabricated via the AD process.…”