Dielectric properties of r.f. sputtered thin aluminium fluoride films

Phahle, A.M.; Hill, Arthur E.; Ruzinsky, M.; Calderwood, J.H.

doi:10.1016/0040-6090(76)90281-9

Cited by 6 publications

(1 citation statement)

References 13 publications

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“…Aluminum fluoride has a low refractive index (1.36-1.40 [12]) and a wide bandgap >10 eV [13] but reports on its dielectric constant range from 2.8 [14] to 6 [15]. This variation might be due to different history, preparation, and physical properties (crystallinity and amorphous) of the samples.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Insulating AlF3/Polyimide Nanolaminate Films

Vehkamäki

Heikkilä

et al. 2021

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This article describes the deposition of AlF3/polyimide nanolaminate film by inorganic-organic atomic layer deposition (ALD) at 170 °C. AlCl3 and TiF4 were used as precursors for AlF3. Polyimide layers were deposited from PMDA (pyromellitic dianhydride, 1,2,3,5-benzenetetracarboxylic anhydride) and DAH (1,6-diaminohexane). With field-emission scanning electron microscopy (FESEM) and X-ray reflection (XRR) analysis, it was found that the topmost layer (nominally 10 nm in thickness) of the nanolaminate film (100 nm total thickness) changed when exposed to the atmosphere. After all, the effect on roughness was minimal. The length of a delay time between the AlF3 and polyimide depositions was found to affect the sharpness of the nanolaminate structure. Electrical properties of AlF3/polyimide nanolaminate films were measured, indicating an increase in dielectric constant compared to single AlF3 and a decrease in leakage current compared to polyimide films, respectively.

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Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Insulating AlF3/Polyimide Nanolaminate Films

Vehkamäki

Heikkilä

et al. 2021

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Structure and Electrical Properties of Thermally Evaporated Nd2O3 Thin Films

Kannan

Narayandass

Balasubramanian

et al. 1991

Phys. Stat. Sol. (a)

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Structure and electrical properties of thermally evaporated neodymium oxide thin films are studied. From the XRD technique the structure of the deposited film (265 nm) is found to be of crystalline nature. However, films of lower thicknesses are found to possess amorphous structure. The loss peak minimum (tan δmin), observed in the frequency‐loss factor plot, is found to shift to the lower frequency region as the number of annealing cycles increases and the results are discussed. The ac conduction property of these films with aluminium electrodes forming a MIM sandwich structure is studied at different frequencies and temperatures. Two activation energies for the conduction process are also estimated and the results are discussed.

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Electrical Properties of Eu2O3 Thin Films

Dakhel

1995

Phys. Stat. Sol. (a)

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Dielectric properties of r.f. sputtered thin aluminium fluoride films

Cited by 6 publications

References 13 publications

Atomic Layer Deposition of Insulating AlF3/Polyimide Nanolaminate Films

Atomic Layer Deposition of Insulating AlF3/Polyimide Nanolaminate Films

Structure and Electrical Properties of Thermally Evaporated Nd2O3 Thin Films

Electrical Properties of Eu2O3 Thin Films

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