Dielectric Properties of Solution-Processed ZrO<SUB>2</SUB> for Thin-Film Transistors

Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors

“…[1] The operation speed and dimensions of TFT should be enhanced to achieve highspeed and high-resolution displays. [2] In this regard, the application of gate insulators (GIs) with high-dielectric-constant (k) materials has attracted much interest; they include ZrO 2 , [3] HfO 2 , [4] TiO 2 , [5,6] TaO x , [7] and Al 2 O 3 . [8] Among the various candidate high-k materials for GI applications, ZrO 2 has a high k (≈25) and an adequate bandgap (≈5.8 eV) that are suitable for the low-voltage operation of TFTs.…”

High-k erbium oxide film prepared by sol-gel method for low-voltage thin-film transistor

“…A low leakage current, a large band gap (over 5 eV) and a high dielectric constant are desirable for a high-performance transistor, and these attributes can be provided by a high-k dielectric material [8]. Several high-k materials (ε r >9), such as zirconium oxide [9,10], aluminium oxide [11,12], hafnium oxide [13], and erbium oxide [14], have been studied as insulated layers in transistors. Compared to other materials, it is predicted by thermodynamics that erbium oxide, as a rareearth oxide, has a high conduction band offset [15] and more smoothness and stability on silicon [16,17], which could reduce the interface trap densities and improve the carrier mobility in the transistor [18].…”

Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics

“…Recently, research on metal-oxide dielectrics with high dielectric constants (high- k ) ( e.g. , ZrO 2 , 5 Al 2 O 3 , 6 HfO 2 ( ref. 7 ) and Y 2 O 3 ( ref.…”