Different fatigue behaviors of SrBi2Ta2O9 and Bi3TiTaO9 films: Role of perovskite layers

Abstract

Articles you may be interested inLow-temperature switching fatigue behavior of ferroelectric SrBi 2 Ta 2 O 9 thin films Appl. Phys. Lett. 84, 954 (2004); Structural and electrical anisotropy of (001)-, (116)-, and (103)-oriented epitaxial SrBi 2 Ta 2 O 9 thin films on SrTiO 3 substrates grown by pulsed laser deposition

Piezoelectric properties of Bi4Ti3O12 thin films annealed in different atmospheres

“…In this work, an excess of 5 wt% of Bi (related to the total Bi content) was added to the solution aiming to minimize the bismuth loss during the thermal treatment. The pure phase could not be obtained without additional bismuth as was reported in literature [8]. The thin films were annealed at 700 8C for 2 h in the conventional furnace in static and oxygen atmosphere (100 mL/min).…”

High Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics

“…Without this additional bismuth the pure phase could not be obtained as was reported in literature. 9 The thin films were annealed at 700°C for 2 h in a conventional furnace. Through this process, we have obtained thickness value of about 320 nm for CBNO, reached by repeating the spin coating and heating treatment cycles.…”

Photoluminescence in Low-Dimensional Oxide Ferroelectric Materials

“…[2]. In addition, good chemical stability of perovskite-like layer makes oxygen vacancies difficultly generate, also contributing the good polarization fatigue-free properties [32]. Due to the layered perovskite structure, Bi 4-x Ln x Ti 3 O 12 exhibits strong anisotropic electrical properties, because the vector of the spontaneous polarization in the layered perovskite materials is almost along a axis.…”