Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

Atabaev, I. G.; Tin, C. C.; Atabaev, B.G.; Saliev, T. M.; Bakhranov, E. N.; Matchanov, N. A.; Lutpullaev, S. L.; Zhang, J.; Saidkhanova, N. G.; Yuzikaeva, F.R.; Nuritdinov, I.; Islomov, A. Kh.; Amanov, M.Z.; Rusli, Rusli; Kumta, A.

doi:10.4028/www.scientific.net/msf.600-603.457

Cited by 10 publications

(8 citation statements)

References 5 publications

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“…Diffusion of boron in 4H-SiC has been performed at different temperatures between 1150 and 1300°C by the novel low-temperature diffusion method described in [31][32][33][34][35][36][37][38][39]. Borosilicate thin film on the surface of SiC has been used as a source for boron atoms.…”

Section: Methodsmentioning

confidence: 99%

Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

Atabaev

Juraev

2018

Advances in Materials Science and Engineering

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Novel method of boron diffusion at low temperatures between 1150 and 1300°C is used for the formation of both p-i SiC junction and i-region in one technological process. As the junction formation conditions in this method are essentially different from those in the conventional diffusion (low temperatures and process of diffusion are accompanied by formation of structure defects), it is of special interest to identify advantages and disadvantages of a new method of diffusion. Developed SiC p-i-n junction diodes have fast switching time, and the duration of the reverse recovery current is less than 10 ns with a breakdown voltage of 120-140 V. Fabricated diodes possess capability to operate at temperatures up to 300°C. As the temperature of diffusion process is lower than the melting temperature of silicon, this new technology allows fabrication of diodes on the base of SiC/Si epitaxial structures.

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Section: Methodsmentioning

confidence: 99%

Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

Atabaev

Juraev

2018

Advances in Materials Science and Engineering

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“…This diffusion in 4H-SiC is performed at different temperatures ranging between 1150 and 1300 ∘ C during 30 min by our new method patented in USA and Uzbekistan and described in detail [17][18][19][20][21][22][23][24][25][26]. Below some information about new method of diffusion is given briefly.…”

Section: Methodsmentioning

confidence: 99%

“…In our method the diffusion process is carried out in air atmosphere in condition of surface oxidation to create a flow of vacancies of Si and C from the crystal surface into the bulk of the sample [17]. Increasing vacancy concentration increases the diffusion constant and solubility of impurity up to 10 20 cm −3 [20][21][22]. Temperature of diffusion in this method is between 1150 and 1300 ∘ C which is lower compared to the conventional diffusion process (more 2000 ∘ C).…”

Section: Methodsmentioning

confidence: 99%

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Atabaev

Juraev

Pak

2017

Advances in Condensed Matter Physics

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P-i-n 4H-SiC⟨Al⟩ diode structures are fabricated by a new approach which is low temperature diffusion of aluminium (Al) in SiC using flow of vacancy defects from surface into volume of crystal. In conventional diffusion in SiC, the operating temperature is usually >2050 ∘ C while, in this approach, the diffusion temperature is between 1150 and 1300 ∘ C. As the conditions of formation of junction in this method essentially differ from conventional diffusion (low temperature and process of diffusion are accompanied by forming structure defects), it is interesting to identify the advantages and disadvantages of a new method of diffusion. Fabricated p-i-n structures have low breakdown voltage between 80 and 140 V (due to the influence of dislocations and micropipes) and are capable of operating at temperatures up to 300 ∘ C. Structure has fast switching time and duration of the reverse recovery current less than 10 ns. We believe that because of low diffusion temperature, the concentration of nitrogen related trapping levels is relatively low and as a result the fast switching time is observed in our samples. It has been shown that this low temperature diffusion technology can be used to fabricate -region and high resistive -region of SiC diode in single-step process.

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“…Recently, research has been done on the use of boron oxide as a means of diffusing boron in SiC [15,16]. Here, we investigate the possibility of introducing phosphorus into SiC using the reaction between phosphorus oxide and SiC.…”

Section: Thermodynamicsmentioning

confidence: 99%

Phosphorus Oxide Assisted n-type Dopant Diffusion in 4H-Silicon Carbide

Mendis

Tin

2010

MRS Proc.

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Phosphorus is an important n-type dopant for both silicon and silicon carbide. Although solid-state diffusion of phosphorus in silicon has been well documented and experimentally proven, not much is known about phosphorus solid-state diffusion in silicon carbide, especially at lower temperatures. A convenient source of phosphorus for solid-state diffusion in silicon carbide is phosphorus oxide. The possibility of using phosphorus oxide as a dopant source for silicon carbide is investigated by considering the probable reactions between silicon carbide and phosphorus oxide at temperatures below 1700 K using published thermodynamic data. By considering the standard free energies of reactions, it can be shown that phosphorus can be introduced in silicon carbide at temperatures below 1700 K using phosphorus oxide. A successful development of low temperature dopant incorporation in silicon carbide would reduce the need for high temperature processes and prevent process-induced thermal degradation of critical device structures such as the oxide-semiconductor interface. Experimental results showing phosphorus impurity incorporation and activation in 4H-SiC are presented.

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Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

Cited by 10 publications

References 5 publications

Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Phosphorus Oxide Assisted n-type Dopant Diffusion in 4H-Silicon Carbide

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