Diffusion barriers between gold and semiconductors

Nowicki, Ronald S.

doi:10.1007/bf03216567

Cited by 11 publications

(9 citation statements)

References 9 publications

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“…In addition, the 5 nm W adhesion layer is the best of all 5 nm adhesion layers studied by a significant margin. Previous studies have shown that W does not readily diffuse into Au even after annealing at 300 °C, and hence there is no dramatic fall-off in stability when using thicker W adhesion layers …”

Section: Resultsmentioning

confidence: 99%

Comparison of Metal Adhesion Layers for Au Films in Thermoplasmonic Applications

Abbott

Murray

Lochlainn

et al. 2020

ACS Appl. Mater. Interfaces

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If thermoplasmonic applications such as heat-assisted magnetic recording are to be commercially viable, it is necessary to optimize both thermal stability and plasmonic performance of the devices involved. In this work, a variety of different adhesion layers were investigated for their ability to reduce dewetting of sputtered 50 nm Au films on SiO2 substrates. Traditional adhesion layer metals Ti and Cr were compared with alternative materials of Al, Ta, and W. Film dewetting was shown to increase when the adhesion material diffuses through the Au layer. An adhesion layer thickness of 0.5 nm resulted in superior thermomechanical stability for all adhesion metals, with an enhancement factor of up to 200× over 5 nm thick analogues. The metals were ranked by their effectiveness in inhibiting dewetting, starting with the most effective, in the order Ta > Ti > W > Cr > Al. Finally, the Au surface-plasmon polariton response was compared for each adhesion layer, and it was found that 0.5 nm adhesion layers produced the best response, with W being the optimal adhesion layer material for plasmonic performance.

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Section: Resultsmentioning

confidence: 99%

Comparison of Metal Adhesion Layers for Au Films in Thermoplasmonic Applications

Abbott

Murray

Lochlainn

et al. 2020

ACS Appl. Mater. Interfaces

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“…It has been proved that, during thermally depositing a metal electrode under high vacuum, the metal would diffuse into the predeposited organic semiconductor layer, which produced remarkable effects on the performance of the semiconductor device. − In order to prevent the evaporation metal from diffusing to the photoactive layer, thus affecting the dark current density of the NIR organic photodiodes, Xiong et al employed a transfer-printed conducting polymer (tp-CP) as the top electrode of the NIR photoresponsive low-bandgap polymers (PMDPP3T) based organic photodiodes . The device structure is expressed as glass/ITO/PEIE/PMDPP3T:PC61BM/PEDOT:PSS.…”

Section: Exploration Of Nir Opds With Excellent Performancementioning

confidence: 99%

Exploration of Near-Infrared Organic Photodetectors

2019

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Near-infrared organic photodetectors (NIR OPDs) own some unique properties such as tailorable optoelectronic properties, ease of processing, compatibility with flexible substrates, and operation at room temperature. Therefore, NIR OPDs are attractive candidates for future electronic products due to the increasingly desired for wearable electronic devices and biomedical applications. In order to fulfill this goal, it is extremely necessary to fabricate high-performance NIR OPDs. In this review, we present a broad overview of advances in NIR OPDs from the perspective of material selection and device performance optimization over the past decade, and we also summarize the potential applications of NIR OPDs. At last, we undergo a deep discussion about the challenges and prospects for the future development of organic NIR OPDs.

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“…The far left Au nanoparticle in Figure a appears to have not lost gold to the surrounding a-Si matrix. This suggests that the diffusion process may be affected by many factors such as local density, defect states, and degree of crystallinity within the a-Si layer …”

Section: Resultsmentioning

confidence: 99%

“…This suggests that the diffusion process may be affected by many factors such as local density, defect states, and degree of crystallinity within the a-Si layer. 47 Plan-View STEM−EELS Analysis. A HAADF STEM image of the aSi/AuNP25nm sample in plan-view geometry is shown in Figure 4a.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Nanoscale-Induced Formation of Silicide around Gold Nanoparticles Encapsulated in a-Si

et al. 2020

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Decorating thin film solar cells with plasmonic nanoparticles is being pursued, in order to improve device efficiency through increased scattering and local field enhancement. Gold nanoparticles are in particular interesting, due to their chemical inertness and plasmon resonance in the visible range of the spectrum.In this work, gold nanoparticles fabricated by a gas aggregation nanoparticle source and embedded in a-Si (a commercial solar cell material) are studied using x-ray photo-electron spectroscopy, transmission electron microscopy, electron energy-loss spectroscopy and energy dispersive X-ray spectroscopy. The formation of gold silicide around the nanoparticles is investigated, as it has important consequences for the optical and electronic properties of the structures. Differently from previous studies, in which the silicide formation is observed for gold nanoparticles and thin films grown on top of crystalline silicon or silica, it is found that silicide formation is largely enhanced around the nanoparticles, owing to their increased surface/volume ratio. A detailed gold silicide formation mechanism is presented based on the results, and strategies for optimizing the design of plasmonically enhanced solar cells with gold nanoparticles encapsulated in a-Si are discussed.

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Diffusion barriers between gold and semiconductors

Cited by 11 publications

References 9 publications

Comparison of Metal Adhesion Layers for Au Films in Thermoplasmonic Applications

Comparison of Metal Adhesion Layers for Au Films in Thermoplasmonic Applications

Exploration of Near-Infrared Organic Photodetectors

Nanoscale-Induced Formation of Silicide around Gold Nanoparticles Encapsulated in a-Si

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