Diffusion of carbon in the carbides of tantalum

Brizes, W.F.

doi:10.1016/0022-3115(68)90076-7

Cited by 39 publications

(13 citation statements)

References 3 publications

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“…At the moment we are performing the same type of chemical diffusion experiments on VC~_, NbC~_y and TaC~_ r This is the more interesting since the reported diffusion coefficients in NbCI _ ~, and TaCj .... [12,17,30] support our findings in TiC~_,, and ZrC1 ,. on the composition dependence of De:.…”

Section: Comparison Between Ticl_v and Zrcl_vsupporting

confidence: 58%

Diffusion of carbon in TiC1−y and ZrC1−y

et al. 1989

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Section: Comparison Between Ticl_v and Zrcl_vsupporting

confidence: 58%

Diffusion of carbon in TiC1−y and ZrC1−y

et al. 1989

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“…Enrichment phases have already been studied in the literature for similar systems like FeB and FeB 2 for boriding [3,4], Fe 2-3 N and Fe 4 N for nitriding [5,6] and also for carburizing TaC and Ta 2 C [7,2,8]. During carburizing, the calculation of layer thicknesses depending on the layer growth coefficient and on the treatment duration is given by Eq.…”

Section: Carbon Enrichment Phase (Step 1)mentioning

confidence: 99%

“…It is introduced continuously inside the furnace with a controlled flow while a vacuum pump maintains a vacuum level of a few millibars. The carburizing temperature is set in a domain where the diffusion coefficients and the solubility of carbon in tantalum are known [2].…”

Section: Introductionmentioning

confidence: 99%

“…The process contains two steps; firstly an enrichment with carbon and secondly a diffusion sequence. Enrichment steps have already been studied and simulated in the literature for similar systems (FeB/Fe 2 B, Fe 2-3 N/Fe 4 N) [3][4][5][6] and for tantalum [7,2,8]. However, the simulation of the annealing step for a bilayer system is not developed in these studies.…”

Section: Introductionmentioning

confidence: 99%

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(TaC/Ta2C) bilayer formed on carburized and annealed tantalum; development of a numerical growth model

Carette

Jacquet

Cotton

et al. 2019

Applied Surface Science

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This paper describes a model developed to simulate the evolution of carbide layers (TaC/Ta 2 C) formed during carburizing and annealing treatments of tantalum. The model is based on a parabolic evolution of the layer thickness during the growth, and on the carbon conservation during the annealing. In order to validate this model a MATLAB® program was developed. It enables the prediction of the evolution of the tantalum carbide layers (nature and thickness) for a desired treatment defined by a temperature, a carburizing and an annealing duration.

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“…Some carburizing techniques for tantalum are described in the literature. The oldest procedure for tantalum carburizing uses solid carbon [7,8], with temperatures higher than 2000 C. Other procedures use hydrocarbons as a carburizing gas, such as atmospheric carburizing [9] or low-pressure carburizing. The low pressure carburizing consist of injecting a carburizing gas such as CO, CO 2 or a hydrocarbon (CH 4 , C 2 H 2 , C 2 H 4 , C 3 H 8, …) into the chamber [10e13].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of tantalum carbides by low carbon flow carburizing

Cotton

Jacquet

Faure

et al. 2017

Materials Chemistry and Physics

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International audienceThe carburizing of tantalum samples under different carbon flow rates has highlighted the influence of the carbon flow rate on the structure of tantalum carbides. XRD analyses enabled the identification of surface structures that were revealed by optical micrographs. Four carbon flow rates were tested. The lowest carbon flow rate produced a Ta2C layer that grew epitaxially on the tantalum substrate according to the relationship: {View the MathML source101¯}Ta// View the MathML source{1¯101}Ta2C; View the MathML source〈101¯〉Ta// View the MathML source〈17¯17010〉Ta2C. An increase in the carbon flow rate resulted in the appearance of TaC nuclei through the carbon enrichment of the Ta2C layer. These nuclei appeared in the form of islets and highly oriented needles. EBSD (Electron Back Scattered Diffraction) analyses and pole figures revealed that the carbide layers grew epitaxially towards their substrates. The Ta2C layer grew according to the relationship View the MathML source{101¯}Ta// View the MathML source{1¯101}Ta2C while the TaC structures nucleated according to the following relationships: {111}TaC//{0001}Ta2C; 〈111〉TaC//〈0001〉Ta2C; {100}TaC// View the MathML source{202¯3}Ta2C; 〈100〉TaC// View the MathML source〈909¯8〉Ta2C and {110}TaC// View the MathML source{101¯3}Ta2C; 〈110〉TaC// View the MathML source〈909¯16〉Ta2C. The highest carbon flow produced stoichiometric TaC grains at the surface, which appeared to be equiaxed. The diversity of the TaC crystallographic orientations stems from the underlying Ta2C layer, the TaC grains having nucleated epitaxially from the Ta2C layer. This misorientation of the Ta2C grains with respect to Ta is governed by the exceeding of a carbon flow limit

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Diffusion of carbon in the carbides of tantalum

Cited by 39 publications

References 3 publications

Diffusion of carbon in TiC1−y and ZrC1−y

Diffusion of carbon in TiC1−y and ZrC1−y

(TaC/Ta2C) bilayer formed on carburized and annealed tantalum; development of a numerical growth model

Epitaxial growth of tantalum carbides by low carbon flow carburizing

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