Diffusion phenomenon and loss of adhesion in chemically amplified negative resists

Towards environmentally friendly processing of ionic liquid-based photoresists with a boosted lithography performance

“…Based on this, we further investigated another phenomenon that is closely related to the PAG in the photolithography process, namely acid diffusion. 49,50 Acid diffusion is the overdevelopment of unexposed areas due to the diffusion of acid generated in the exposed areas to the unexposed areas during the lithography process, which is one of the key factors affecting the quality of patterns. The photoresists with different IL contents were experimented with under the same lithographic process and the surface morphology of the developed lithography pattern was observed.…”

Survey of processing affects on substrate compatibility of chemically amplified resists.

“…A similar problem was reported b y Amblard et al who studied a negative-tone CA resist on an aluminum substrate. [4] Amblard postulated that the acid molecules of the resist were neutralized by the amphoteric behavior of the aluminum resulting in reduced cross-linking of the resist near the interface. Sakakia used time-offlight secondary mass spectrometric to study atmospheric NH3 and NH4+ concentrated on the surface of Boron-Phosphorous-Silicate-Glass (BPSG) films which were know to cause positivetone CA resist footing.…”