Digital 640x512 / 15μm InSb detector for high frame rate, high sensitivity, and low power applications

Markovitz, Tuvy; Pivnik, I.; Calahorra, Z.; Ilan, E.; Hirsh, I.; Zeierman, E.; Eylon, M.; Kahanov, E.; Kogan, I.; Fishler, N.; Brumer, Maya; Lukomsky, Inna

doi:10.1117/12.883345

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…The IR camera developed for the use at ASDEX Upgrade contains the IR detector, an interface electronics board and the magnetic and electric shielding required for the operation in an environment with a high magnetic field. The IR detector used for the IR system is a digital 640x512 15 µm pitch InSb detector with an integrated Stirling cooler developed by SCD 6 . The detector has a spectral response from λ = 3.6 − 4.9 µm limited by spectral filters.…”

Section: Ir Cameramentioning

confidence: 99%

Real time capable infrared thermography for ASDEX Upgrade

Sieglin

Faitsch

Herrmann

et al. 2015

Review of Scientific Instruments

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Infrared (IR) thermography is widely used in fusion research to study power exhaust and incident heat load onto the plasma facing components. Due to the short pulse duration of today's fusion experiments, IR systems have mostly been designed for off-line data analysis. For future long pulse devices (e.g., Wendelstein 7-X, ITER), a real time evaluation of the target temperature and heat flux is mandatory. This paper shows the development of a real time capable IR system for ASDEX Upgrade. A compact IR camera has been designed incorporating the necessary magnetic and electric shielding for the detector, cooler assembly. The camera communication is based on the Camera Link industry standard. The data acquisition hardware is based on National Instruments hardware, consisting of a PXIe chassis inside and a fibre optical connected industry computer outside the torus hall. Image processing and data evaluation are performed using real time LabVIEW.

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Section: Ir Cameramentioning

confidence: 99%

Real time capable infrared thermography for ASDEX Upgrade

Sieglin

Faitsch

Herrmann

et al. 2015

Review of Scientific Instruments

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“…InSb detector arrays have found many applications in MWIR due to their spatial uniformity, low dark current and image quality. This technology has evolved over the years in response to the stringent requirements for applications in missile seekers and missile warning systems (MWS) [57][58]. For these applications, the IR imagers need to exhibit high dynamic range, fast frame rates, high resolution, very wide fields of view (FOV), and high sensitivity.…”

Section: Insb Detector Arraymentioning

confidence: 99%

Advances in Infrared Detector Array Technology

Dhar¹,

Dat²,

Sood³

2013

Optoelectronics - Advanced Materials and Devices

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This Chapter covers recent advances in Short Wavelength Infrared (SWIR), Medium Wavelength Infrared (MWIR) and Long Wavelength Infrared (LWIR) materials and device technologies for a variety of defense and commercial applications. Infrared technology is critical for military and security applications, as well as increasingly being used in many commercial products such as medical diagnostics, drivers' enhanced vision, machine vision and a multitude of other applications, including consumer products. The key enablers of such infrared products are the detector materials and designs used to fabricate focal plane arrays (FPAs). Since the 1950s, there has been considerable progress towards the materials development and device design innovations. In particular, significant advances have been made during the past decade in the band-gap engineering of various compound semiconductors that has led to new and emerging detector architectures. Advances in optoelectronics related materials science, such as metamaterials and nanostructures, have opened doors for new approaches to apply device design methodologies, which are expected to offer enhanced performance and low cost products in a wide range of applications. This chapter reviews advancements in the mainstream detector technologies and presents different device architectures and discussions. The chapter introduces the basics of infrared detection physics and various infrared wavelength band characteristics. The subject is divided into individual infrared atmospheric transmission windows to address related materials, detector design and device performance. Advances in pixel scaling, junction formation, materials growth, and processing technologies are discussed. We discuss the SWIR band (1-3 microns) and address some of the recent advances in In-GaAs, SiGe and HgCdTe based technologies and their applications. We also discuss MWIR band that covers 3-5 microns, and its applications. Some of the key work discussed includes InSb, HgCdTe, and III-V based Strained Layer Super Lattice (SLS) and barrier detector tech

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“…The emergence of high-operating-temperature (HOT) mid-wavelength infrared (MWIR) photodetectors would lead to a reduction in the size, weight, and cost of the detection system [1] . Although InSb material is the most widely used HOT MWIR photodetector, InSb-based detection technology is plagued by its narrow bandgap (0.235 eV at 77 K) and operating temperature (~105 K) [2,3] .…”

Section: Introductionmentioning

confidence: 99%

High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

Hao¹,

Teng²,

Zhu³

et al. 2022

J. Semicond.

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We demonstrate a high-operating-temperature (HOT) mid-wavelength InAs/GaSb superlattice heterojunction infrared photodetector grown by metal–organic chemical vapor deposition. High crystalline quality and the near-zero lattice mismatch of a InAs/GaSb superlattice on an InAs substrate were evidenced by high-resolution X-ray diffraction. At a bias voltage of –0.1 V and an operating temperature of 200 K, the device exhibited a 50% cutoff wavelength of ~ 4.9 μm, a dark current density of 0.012 A/cm2, and a peak specific detectivity of 2.3 × 109 cm·Hz1/2 /W.

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Digital 640x512 / 15μm InSb detector for high frame rate, high sensitivity, and low power applications

Cited by 5 publications

References 2 publications

Real time capable infrared thermography for ASDEX Upgrade

Real time capable infrared thermography for ASDEX Upgrade

Advances in Infrared Detector Array Technology

High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

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