Digital circuit on
 x
 = 0.35 Hg
 
 1−
 x
 
 Cd
 
 x
 
 Te

Schiebel, R. A.; Dodge, J.; Gooch, R.

doi:10.1049/el:19890363

Cited by 7 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because of the very nature of its architecture, it was beginning to have issues with signal sensitivity, and 1/f noise. A p-type version of the device was developed, resulting in improved MIS voltage breakdown, and the simultaneous development of monolithic HgCdTe integrated circuit components, such as MISFETs, output amplifiers, digital shift registers, and a correlated double sampler 10 . However, all of this effort was to no avail.…”

Section: Nd Generation Irfpa Architecturesmentioning

confidence: 99%

An infrared journey

Kinch¹

2015

SPIE Proceedings

View full text Add to dashboard Cite

Infrared focal plane array technology has evolved dramatically over the last 50 years. The author has been privileged to participate in this remarkable evolution, working totally within the confines of one of the most significant and remaining US players in the focal plane game, namely Texas Instruments, later to become DRS Technologies. This presentation describes a journey from the Common Module through second and third generation infrared systems in the USA up to the exciting developments of the present day ultra-small pixel technology. It represents an attempt to detail both the technology development of the time together with some of its associated drama as viewed from the author's particular perspective. Thoughts on the lessons learned from this journey and their possible impact on future technology development will be discussed.

show abstract

Section: Nd Generation Irfpa Architecturesmentioning

confidence: 99%

An infrared journey

Kinch¹

2015

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…Because of the very nature of its architecture, it was beginning to have issues with signal sensitivity, and 1/f noise. A p-type version of the device was developed, resulting in improved VIMIS voltage breakdown, and also enabling the simultaneous development of monolithic HgCdTe integrated circuit components, such as MISFETs, output amplifiers, digital shift registers, and a correlated double sampler 10 . Other architectures utilizing double layer heterojunctions (DLHJs), and ion implanted diodes in p-HgCdTe, were also investigated.…”

Section: Ti's 2 Nd Generation Fpa Architecturementioning

confidence: 99%

Fifty years of HgCdTe at Texas Instruments and beyond

Kinch

2009

SPIE Proceedings

View full text Add to dashboard Cite

Work on HgCdTe began at Texas Instruments in the early 1960s, and continued through 1997 when TI's defense business was sold first to Raytheon, and subsequently in 1998 to DRS Technologies. This presentation traces the history of HgCdTe's evolution throughout this timeframe to the present day, as viewed through the eyes of the author and several of his TI contemporaries who have survived the experience. The materials technology will be traced from the early days of bulk growth by the solid state recrystalization technique, through the traveling heater method of growth, to liquid phase epitaxy from large Te-rich melts, to vapor phase growth by molecular beam epitaxy and metal organic chemical vapor deposition. The evolution of detector device architectures at TI over the years will be discussed, from the early, successful days of photoconductors and the Common Module System, through the somewhat problematic and relatively unsuccessful foray into charge coupled and charge injection devices for 2 nd generation FPAs for the Javelin program, to the outstandingly successful development of the vertically integrated photodiode (VIP) and high density VIP FPA architectures for monocolor and multi-color 3 rd generation systems. The versatile, and unique nature of this infrared semiconductor materials system will be highlighted by reference to current work at DRS Technologies into electron avalanche photodiodes (EAPDs), for use in active/passive IR systems, and high operating temperature (HOT) detectors, which threaten to eventually offer BLIP photon detection at uncooled operating temperatures, over the whole IR spectrum from 1 to 12um.

show abstract