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To investigate the possibility that deep levels are associated with dislocations in narrow band gap HgCdTe, deep level transient spectroscopy has been used to study n+-p diodes fabricated on p-type bulk Hg0.78Cd0.22Te samples with either a ‘‘normal’’ dislocation density of about 105 cm−2 or a high dislocation density of about 106 cm−2. These samples which are gold doped with a hole concentration of 1.2×1015 cm−3, have a band gap of about 0.12 eV at 77 K. In samples with a ‘‘normal’’ dislocation density, a deep level of about 80 meV above the valence band was found. However, a midgap level of about 60 meV above the valence band with larger peak amplitude and broader line shapes was found in the sample with a high dislocation density.

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By means of the first observations of the quantum Hall effect in a type II–VI semiconducting compound, Hg1−xCdxTe, we have studied the two-dimensional electron gas formed by the inversion layer of a MISFET (metal–insulator–semiconductor field effect transistor) device. Extensive details regarding the fabrication and use of the MISFET are described. The data also indicate an abrupt onset of the quantum Hall effect which, when interpreted with a percolation threshold theory, is used to further investigate conditions affecting charge transport mechanisms in the two-dimensional electron gas at a HgCdTe interface.

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