1/f noise and material defects in HgCdTe diodes

Noise spectra and dark current investigations in n+-p-type Hg1-xCdxTe (x ~0.22) photodiodes

“…Fluctuation of deep point defects, shallow etch pits, dislocation multiplication and clustering are recognized to be possible for 1/f noise source. As shown in [12], 1/f noise in LWIR photodiodes is a bulk phenomenon associated with defects in the depletion region. However, the states at the interface of HgCdTe and passivating layer can also contribute to 1/f noise [11,13,14].…”

“…As to investigations of noise mechanisms in HgCdTe photodiodes the origin of the 1/f noise still seems to be the most important and unsolved problem. Several sources of the 1/f noise have been proposed in application to these photodiodes [10][11][12][13][14][15]. One of the possible source is lattice defects of different types unintentionally or intentionally introduced during growth of starting material.…”

Analysis of 1/f noise in LWIR HgCdTe photodiodes

“…A number of studies have been made on finding the origin of 1/f noise in HgCdTe photodiodes. 10,11 Analysis of 1/f Noise in LWIR HgCdTe Photodiodes SOO HO BAE, 1,2 SANG JUN LEE, 3 We study the 1/f noise currents and dark currents in LWIR HgCdTe photodiodes. 6 Also, deep level has been thought to be responsible for 1/f noise at higher temperature in MWIR photodiodes by Bajaj et al 7 Other causes of 1/f noise include diffusion current, 8 generation recombination current, 9 and material defects.…”

Point-defect influence on 1/f noise in HgCdTe photodiodes

“…The role of the interdiffusion-induced structural defects within HgCdTe capped by a Te-rich CdTe passivation layer has been investigated in Ref. 23.…”