Point-defect influence on 1/f noise in HgCdTe photodiodes

Mainzer, N.; Lakin, E.; Zolotoyabko, E.

doi:10.1063/1.1494118

Cited by 8 publications

(4 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…According to theoretical investigations [32], a charged defect V O 2+ having a large energy barrier of 0.2 eV can be photoionized by UV excitation and, thus, donate two electrons to the NW; therefore, positively charged defects play a role similar to that of charged scattering centers in semiconductors. Hooge's constant is strongly correlated with the concentration of ionized defects in a material [41], as well as the presence of charged defects [14] and/or surface charged species [40]. Accordingly, the value of Hooge's constant in our NW phototransistors would be enhanced under UV excitation.…”

Section: S I / I Dmentioning

confidence: 89%

Low-frequency electrical fluctuations in metal–nanowire–metal phototransistors

Lu¹,

Lu²,

Wang³

2014

Nanotechnology

View full text Add to dashboard Cite

Using low-frequency noise spectroscopy to explore the physical origins of electrical fluctuations in ZnO nanowire (NW) phototransistors featuring a metal-NW-metal configuration, we have found that bulk mobility scatterings gave rise to electrical fluctuations in the low-gate voltage (V G) regime, providing values of Hooge's constant in the ranges 6.0-9.6 × 10(-3) and 1.9-2.2 × 10(-1) in the dark and under UV excitation, respectively. When moving into the higher V G regime, we assign the electrical fluctuations to an interaction process involving trapping and detrapping of channel carriers by charge traps located near the NW-dielectric interface, suggesting that the mechanism of the electrical fluctuation transitioned from bulk NW-dominated to NW/dielectric interface-dominated regimes. We have also addressed the effective density of interface traps responsible for the electrical fluctuations in the high-V G region. This report provides physical insight into the origins of electrical fluctuations in NW phototransistors.

show abstract

Section: S I / I Dmentioning

confidence: 89%

Low-frequency electrical fluctuations in metal–nanowire–metal phototransistors

Lu¹,

Lu²,

Wang³

2014

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…Since 1/f noise is important in IR imaging systems, which usually operate at low frame rates, it is worth mentioning that Mainzer et al 107 found, using n + p diodes fabricated by SCD in vacancy-doped LPE grown HgCdTe layers, that the 1/f noise depended linearly on the fraction of ionized point defects. The total point-defect concentration was extracted from the comparison of the absolute lattice parameter accurately measured by high-resolution X-ray diffraction, with the lattice parameter expected from the Cd content as determined from the Fourier transform infrared transmission curve.…”

Section: Nonideal Behavior In Hgcdte Photodiodes -Tunneling Effectsmentioning

confidence: 99%

Thirty years of HgCdTe technology in Israel

Weiss

2009

SPIE Proceedings

View full text Add to dashboard Cite

The study of HgCdTe technology in Israel began in the mid 1970's under the leadership of the late Prof. Kidron and his group at the Technion, Israel Institute of Technology. The R&D efforts were continued by other groups at the Technion and other universities and research institutes in Israel, as well as by SCD. Many aspects of the technology of this material were studied, including both bulk crystal and epitaxial growths and microelectronic fabrication methods, with an emphasis on surface treatment and passivation. Various characterization methods were developed to study both the basic and applied material and device properties. The efforts, reviewed in this article, matured at SCD as it commercialized the HgCdTe technology, launching large-volume production lines of state-of-the-art linear and multi-linear TDI LWIR detector arrays of various sizes from 10×1 to 480×6 elements. Over the years, SCD has supplied its customers with thousands of both photoconductive (PC) and photovoltaic (PV) detectors, which are briefly presented in the paper.

show abstract

“…或迁移率的涨落, 最终形成探测器噪声的重要来源 [30][31][32] . 碲镉汞红外焦平面工作在光伏型、电流模式, 其暗电流以及相关噪声水平是决定其探测器灵敏度的关键要素, 它决定了红外系统对目标的探测、跟踪和识别能力 [33] .…”

Section: 另外无论采用液相外延的平衡态生长方法还是unclassified