Digital Pattern Generator for polynomially bordered shape primitives

Strahle, S.; Schock, Klaus; Prins, F. E.; Kern, D. P.

doi:10.1016/s0167-9317(96)00184-0

Cited by 12 publications

(4 citation statements)

References 2 publications

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“…A new digital pattern generator for fast generation of shape primitives was developed and built, 6 and connected to the microscope to produce the deflection signals. A new digital pattern generator for fast generation of shape primitives was developed and built, 6 and connected to the microscope to produce the deflection signals.…”

Section: Technologymentioning

confidence: 99%

Resist processes for low-energy electron-beam lithography

Schock

Prins

Strahle

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Accurate critical dimension control by using an azide/novolak resist process for electron-beam lithography Low-energy electron-beam lithography processes have been studied, a new resist system has been proposed, and preliminary tests have been performed. The interaction between electrons and e-beam resist and its effect on the exposure dose and the penetration depth of the electrons have been studied as a function of electron energy. A silylation process for low energy e-beam lithography has been tested and applied to a new bilayer resist scheme for low-energy electron-beam exposure.

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Section: Technologymentioning

confidence: 99%

Resist processes for low-energy electron-beam lithography

Schock

Prins

Strahle

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

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“…The starting material in our experiments was a SOI wafer with a 36 nm top silicon layer on 400 nm buried oxide. In order to fabricate the initial Si dots, samples were spincoated with 70 nm thick PMMA which was then patterned by 30 kV electron beam lithography using a Philips XL30 FEG scanning electron microscope with a home-built pattern generator [9]. Dots with different diameters were realized using point exposures with different doses ranging from 9 to 90 pC.…”

Section: Methodsmentioning

confidence: 99%

Thermal oxidation of silicon-on-insulator dots

Prins¹,

Single²,

Zhou³

et al. 1999

Nanotechnology

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We present a systematic study on the oxidation properties of Si dots on silicon-on-insulator material. Si dots with diameters varying from 60 down to 10 nm were realized and investigated in a transmission electron microscope. After thermal oxidation at 850 °C for different times the size and shape of the Si dots were analysed using energy-filtering transmission electron microscopy. The results show that the size of the dots is reduced with a reduced oxidation rate on smaller structures and indications for self-limiting effects. Further, the shape of the dots has changed significantly as the oxidation rate on curved surfaces is reduced with respect to planar surfaces. This effect therefore strongly depends on the aspect ratio of the structure.

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“…In order to fabricate the initial Si dots, samples were spincoated with 70 nm thick PMMA which was then patterned by 30 kV electron beam lithography using a Philips XL30 FEG scanning electron microscope with a home-built pattern generator [9]. Dots with different diameters were realized using point exposures with different doses ranging from 9 to 90 pC.…”

Section: Methodsmentioning

confidence: 99%

$ U$-convergence almost everywhere of double Fourier series

Dyachenko¹

1995

Sb. Math.

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We present a systematic study on the oxidation properties of Si dots on silicon-on-insulator material. Si dots with diameters varying from 60 down to 10 nm were realized and investigated in a transmission electron microscope. After thermal oxidation at 850 • C for different times the size and shape of the Si dots were analysed using energy-filtering transmission electron microscopy. The results show that the size of the dots is reduced with a reduced oxidation rate on smaller structures and indications for self-limiting effects. Further, the shape of the dots has changed significantly as the oxidation rate on curved surfaces is reduced with respect to planar surfaces. This effect therefore strongly depends on the aspect ratio of the structure.

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Digital Pattern Generator for polynomially bordered shape primitives

Cited by 12 publications

References 2 publications

Resist processes for low-energy electron-beam lithography

Resist processes for low-energy electron-beam lithography

Thermal oxidation of silicon-on-insulator dots

$ U$-convergence almost everywhere of double Fourier series

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