Accurate critical dimension control by using an azide/novolak resist process for electron-beam lithography Low-energy electron-beam lithography processes have been studied, a new resist system has been proposed, and preliminary tests have been performed. The interaction between electrons and e-beam resist and its effect on the exposure dose and the penetration depth of the electrons have been studied as a function of electron energy. A silylation process for low energy e-beam lithography has been tested and applied to a new bilayer resist scheme for low-energy electron-beam exposure.

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