Fabrication and characterisation of Coulomb blockade devices in silicon

Augke, R.; Eberhardt, W.; Strahle, S.; Prins, F. E.; Kern, D. P.

doi:10.1016/s0167-9317(99)00038-6

Cited by 14 publications

(5 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At low backgate voltages random fluctuations of the dopant concentration lead to the formation of a multiple-tunneljunction device. The number of effective tunnel barriers within the double-dot geometry can be tuned by changing the electrostatic potentials of the gates and thereby shifting the Fermi level relative to the potential landscape [10]. Multiple tunnel junctions in series cause the maximum width of the CBR to depend on the number of junctions [10] and the distribution of conductance oscillations is, as expected, stochastic [11,12].…”

mentioning

confidence: 84%

“…The number of effective tunnel barriers within the double-dot geometry can be tuned by changing the electrostatic potentials of the gates and thereby shifting the Fermi level relative to the potential landscape [10]. Multiple tunnel junctions in series cause the maximum width of the CBR to depend on the number of junctions [10] and the distribution of conductance oscillations is, as expected, stochastic [11,12]. Increasing V bg leads to an increase of the Fermi energy and to a significant decrease in the number of effective tunnel junctions.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Single-electron charging in doped silicon double dots

Single

Augke

Prins

et al. 1999

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We have fabricated and characterized a uniformly n-doped silicon double-dot structure. The electrical behaviour could be changed between that of a multiple tunnel junction and that of a double dot by applying appropriate gate voltages. The double-dot characteristics observed can be attributed to the geometry of the structure, and it is shown that the influence of the multiple tunnel junctions can be entirely eliminated. In the double-dot regime, characteristic charging diagrams were obtained by independently sweeping two sidegate voltages. Using a classical capacitance equivalent circuit the hexagonal lattice of the conductance resonances in the charging diagram was modelled and single-electron charging in the geometrical double dot is concluded from the match between model and experimental data.

show abstract

mentioning

confidence: 84%

mentioning

confidence: 99%

Single-electron charging in doped silicon double dots

Single

Augke

Prins

et al. 1999

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…For example, nanowire MOSFETs fabricated by conventional VLSI fabrication technologies can work as SE devices, although multidots were created naturally in the channel so that the number and size of dots cannot be controlled. [1][2][3][4][5][6] Another fabrication method, where nanoparticles, such as colloidal or gold nanoparticles, were deposited on the substrate with the electrodes, was reported. [7][8][9][10][11] Double-dot SE devices with a common gate can work only as SE transistors where electrons are continuously transferred one by one.…”

Section: Introductionmentioning

confidence: 99%

Anomalous single-electron transfer in common-gate quadruple-dot single-electron devices with asymmetric junction capacitances

Imai¹,

Ito²

2018

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this paper, anomalous single-electron transfer in common-gate quadruple-dot turnstile devices with asymmetric junction capacitances is revealed. That is, the islands have the same total number of excess electrons at high and low gate voltages of the swing that transfers a single electron. In another situation, two electrons enter the islands from the source and two electrons leave the islands for the source and drain during a gate voltage swing cycle. First, stability diagrams of the turnstile devices are presented. Then, sequences of single-electron tunneling events by gate voltage swings are investigated, which demonstrate the above-mentioned anomalous single-electron transfer between the source and the drain. The anomalous single-electron transfer can be understood by regarding the four islands as "three virtual islands and a virtual source or drain electrode of a virtual triple-dot device". The anomalous behaviors of the four islands are explained by the normal behavior of the virtual islands transferring a single electron and the behavior of the virtual electrode.

show abstract

“…Silicon [or silicon-on insulator (SOI)] is, in principle, an attractive material for QD experiments due to its highly developed fabrication technology and the potential integration of QD devices with conventional electronics circuits. , Previous approaches toward building QD systems on SOI substrates have mainly focused on obtaining ultrathin NWs from lithography followed by etching procedures to reduce the NW width. − Single-electron effects have been observed in these devices, but the results disagree with the designed device geometry; the etching processes introduce defects and roughness that, in turn, lead to the random formation of QDs within the nanostructure and irreproducible transport characteristics. For example, Coulomb blockade diamond diagrams, a signature of single-electron charging, are typically not obtainable because the change of signal in consecutive scans can be much larger than the gate influence .…”

Section: Introduction and Experimental Backgroundmentioning

confidence: 99%

The Emergence of a Coupled Quantum Dot Array in a Doped Silicon Nanowire Gated by Ultrahigh Density Top Gate Electrodes

Green

Heath

et al. 2007

J. Phys. Chem. C

View full text Add to dashboard Cite

The electrical characteristics of Si nanowire gated by an array of very closely spaced nanowire gate electrodes are experimentally determined and theoretically modeled. Qualitative and quantitative changes in the transport characteristics of these devices, as a function of gate-array voltage, are described. Experiments are reported for two widths of Si nanowires, 40 and 17 nm, and for a varying number of gate electrodes, all spaced at a pitch of 33 nm. We find that these top nanowire gate electrodes can be utilized to locally deplete the carriers in the underlying Si nanowire and thus define an array of coupled quantum dots along the nanowire. Reproducible Coulomb blockade is observed, and clear diamond features are obtained when the conductance is plotted in the plane of the source-drain and gate voltages. The regularity of the diamond diagrams is imposed by the regularity of the SNAP top gate electrodes. Model computations of the electronic structure starting from a tight-biding Hamiltonian in the atomic basis suggest that the control made possible by the top gate voltage induces the emergence (and reversible submergence) of a coupled quantum dot structure in an otherwise homogenously doped Si nanowire.

show abstract

Fabrication and characterisation of Coulomb blockade devices in silicon

Cited by 14 publications

References 7 publications

Single-electron charging in doped silicon double dots

Single-electron charging in doped silicon double dots

Anomalous single-electron transfer in common-gate quadruple-dot single-electron devices with asymmetric junction capacitances

The Emergence of a Coupled Quantum Dot Array in a Doped Silicon Nanowire Gated by Ultrahigh Density Top Gate Electrodes

Contact Info

Product

Resources

About