Uniformly doped single electron transistors nominally consisting of a single island and two silicon tunneling barriers have been fabricated on silicon–on–insulator material. Two operation regimes are found depending upon the gate voltages applied. The structure acts either as a multiple tunnel junction device or as a single electron transistor consisting of a single dot corresponding to the geometrical shape of the device. The multiple tunnel junction behavior is attributed to the formation of additional tunneling barriers, introduced into the structure by the high doping level. We demonstrate that these barriers can be removed by raising the Fermi level via the application of an appropriate gate voltage.

We report on a new method to build suspended silicon nanowires in highly doped silicon films in silicon-on-insulator substrates. The beams are defined by high-resolution, low-energy electron-beam lithography using a two-layer positive electron resist. Micromachining techniques including dry and wet etching are applied to pattern the structures. We show first low-temperature measurements of these novel devices indicating electron-phonon interaction.

A nano‐triode fabricated out of doped silicon‐on‐insulator material is demonstrated. Low turn‐on voltages and the possibility of direct integration into existing silicon technology are but two of the advantages of these new devices. It is also possible to tune the current collected at the drain electrode by biasing the gate electrodes. The Figure depicts a scanning electron micrograph of the free‐standing silicon nanostructure.

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