Nanomechanics features three-dimensional nanostructuring, which allows full exploitation of the mechanical degree of freedom on the nanometre scale. In this work a number of exemplifying experiments on nano-electromechanical systems realized in silicon materials will be presented. First an introduction to the underlying mechanics will be given and finite element methods required for simulations will be discussed. Further topics presented include measurement methods for probing the mechanical properties of free standing nanowires, sensor applications and nonlinear properties of nanomechanical resonators. Other applications such as parametric frequency tuning are demonstrated and the major sources of dissipation are discussed. Finally, an outlook over the fundamental limits of nanoresonators is given.

We report on a new method to build suspended silicon nanowires in highly doped silicon films in silicon-on-insulator substrates. The beams are defined by high-resolution, low-energy electron-beam lithography using a two-layer positive electron resist. Micromachining techniques including dry and wet etching are applied to pattern the structures. We show first low-temperature measurements of these novel devices indicating electron-phonon interaction.

We have realized highly doped suspended silicon nanowires with lateral dimensions down to 20 nm for studying electron transport and dissipation phenomena in these wires. Random dopant fluctuations lead to the formation of multiple tunnel junctions, showing Coulomb blockade phenomena at low drain-source bias. In the finite-bias regime we observe relaxation of hot electrons via phonons. Melting of the wires then occurs at high bias values at an extremely large current density of the order of 10 6 A cm −2 .

A nano‐triode fabricated out of doped silicon‐on‐insulator material is demonstrated. Low turn‐on voltages and the possibility of direct integration into existing silicon technology are but two of the advantages of these new devices. It is also possible to tune the current collected at the drain electrode by biasing the gate electrodes. The Figure depicts a scanning electron micrograph of the free‐standing silicon nanostructure.

We present measurements on nanomechanical resonators operating in the radio frequency range. We apply a setup which allows the comparison of two schemes of displacement detection for mechanical resonators, namely conventional power reflection measurements of a probing signal and direct detection by capacitive coupling via a gate electrode. For capacitive detection, we employ a preamplifier, mounted close to the sample and connected to it via bond wires, which enables direct measurements of the resonator's displacement. We observe that the response of the mechanical resonator depends on the detection technique applied, which is verified in model calculations. We show results for the detection of subharmonics.