Electron-phonon interaction in suspended highly doped silicon nanowires

Tilke, A.; Pescini, L.; Erbe, Artur; Lorenz, H.; Blick, Robert H.

doi:10.1088/0957-4484/13/4/310

Cited by 31 publications

(24 citation statements)

References 29 publications

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“…This will be the focus of further investigations. Moreover, the weak coupling between the electrons and the phonon bath, which is typically in place in nano-scale systems because of finitesize effects, 12,13 should be considered. This may lead to exceedingly long thermalisation times on the scale of the time-resolved experiments presented here and consequently result in an increase of the electron temperature.…”

Section: Dqd Ementioning

confidence: 99%

Electron temperature in electrically isolated Si double quantum dots

Rossi

Ferrus

Williams

2012

Applied Physics Letters

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Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation.Quantum mechanical charge and spin states of electrons confined in semiconductor double quantum dots (DQD) 1-3 have recently attracted much interest, as they can be exploited to implement solid-state quantum computation. One key requirement to perform quantum logic operations is a long coherence time for the qubitembodying states. Among other system materials, silicon is particularly suited to retain spin-coherence for long time mainly due to the existence of a stable isotope ( 28 Si) without nuclear magnetic moment. 4 Another approach to mitigate the decoherence introduced by the interaction with the environment is the suppression of exchange processes with electrons in the reservoirs.5 This has proven to be beneficial if a charge-qubit implementation is to be preferred. Indeed, single-qubit operations have been successfully implemented in trench-isolated silicon double quantum dots, 6 where electrons are confined in a lead-less system and only capacitively coupled to gates.Here, we investigate the electronic occupation of phosphorus-doped isolated DQDs using a single-electron tunnelling device (SET) as a charge sensor. By means of time-resolved charge detection, the probability of occupation of each dot is evaluated as the control gate is swept across a degeneracy point (i.e. alignment of energy levels which leads to electron tunnelling). From these measurements we have extracted the electron temperature in the isolated quantum system and compared it with the one measured in the SET leads. The advantageous effects of a lead-decoupled system are quantitatively observed as a significant temperature reduction in the DQD.The top inset of Fig. 1(a) shows a scanning electron micrograph (SEM) image of a representative device. The use of silicon-on-insulator wafers ensures spatial confinement of electrons in the vertical direction; reactive ion etching is used to define deep trenches which produce confinement within the horizontal plane. The silicon active layer is doped with a concentration of phosphorus atoms of about 3×1019 cm −3 to provide the nanostructure with free carriers. From the density of ima) Electronic mail: ar446@cam.ac.uk planted donors, we estimate that a 40 nm diameter dot contains about 2000 electrons. Both electron-beam and optical lithography are employed to define the device pattern. Full details of the fabrication process,...

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Section: Dqd Ementioning

confidence: 99%

Electron temperature in electrically isolated Si double quantum dots

Rossi

Ferrus

Williams

2012

Applied Physics Letters

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“…Typically the high current density in conventional metals can create voids by electromigration and most fail due to Joule heating at ∼10 3 to 10 4 A/cm 2 . There have been efforts to characterize the maximum current density of some individual NWs, for example, PtSi NW [332], Si NW [333], [334], NiSi NW [335], and GaN NW [336], [337]. In exploring the application limits of the InP NW photoconductive switch (see Section III-B), the maximum photoresponse current and thermal breakdown of the device with dc bias under a 780-nm pulsed-laser illumination were studied.…”

Section: F High Current Capacity and Reliability Of Nwsmentioning

confidence: 99%

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Logeeswaran

Nayak

et al. 2011

IEEE J. Select. Topics Quantum Electron.

141

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Abstract-One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research community due to their ease of synthesis and unique optical, mechanical, electrical, and thermal properties. Specifically, the physics and technology of NW PDs offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative index metamaterials devices. The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation of this technology module in the semiconductor foundries. In this paper, we review the unique advantages of NW-based PDs, current device integration schemes and practical strategies, recent device demonstrations in lateral and vertical process integration with methods to incorporate NWs in PDs via direct growth (nanoepitaxy) methods and transfer-printing methods, and discuss the numerous technical design challenges. In particular, we present an ultrafast surface-illuminated PD with 11.4-ps full-width at half-maximum (FWHM), edge-illuminated novel waveguide PDs, and some novel concepts of light trapping to provide a full-length discussion on the topics of: 1) low-resistance contact and interfaces for NW integration; 2) high-speed design and impedance matching; and 3) CMOS-compatible massmanufacturable device fabrication. Finally, we offer a brief outlook into the future opportunities of NW PDs for consumer and military application.

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“…1,2) In addition, MEMSs have recently been miniaturized to sub-micron/nanoscale, which are called nanoelectromechanical systems (NEMS), whose mechanical and electrical properties have extensively been investigated. [3][4][5][6] For example, an oscillation frequency of over 1 GHz has already been reported for a 1.1-mm-long SiC-based beam. 6) Since the operation speed of NEMS increases square inversely proportional to their characteristic lengths, extremely fast NEMS with a switching time close to that of electronic devices may be realized by reducing their dimensions into the 100-nm regime.…”

Section: Introductionmentioning

confidence: 99%

Scaling Analysis of Nanoelectromechanical Memory Devices

Nagami

Tsuchiya

Uchida

et al. 2010

Jpn. J. Appl. Phys.

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Numerical simulation of electromechanical switching for bistable bridges in non-volatile nanoelectromechanical (NEM) memory devices suggests that performance of memory characteristics enhanced by decreasing suspended floating gate length. By conducting a two-dimensional finite element electromechanical simulation combined with a drift-diffusion analysis, we analyze the electromechanical switching operation of miniaturized structures. By shrinking the NEM floating gate length from 1000 to 100 nm, the switching (set/reset) voltage reduces from 7.2 to 2.8 V, switching time from 63 to 4.6 ns, power consumption from 16.9 to 0.13 fJ. This indicates the advantage of fast and low-power memory characteristics. #

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Electron-phonon interaction in suspended highly doped silicon nanowires

Cited by 31 publications

References 29 publications

Electron temperature in electrically isolated Si double quantum dots

Electron temperature in electrically isolated Si double quantum dots

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Scaling Analysis of Nanoelectromechanical Memory Devices

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