Drift region characteristics of InP-based HEMT devices evaluated by a simple drift region model

Strahle, S.; Geiger, Dorin; Henle, B.; Kohn, E.

doi:10.1109/iciprm.1994.328236

Cited by 4 publications

(3 citation statements)

References 5 publications

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“…[12,13]. There are also several models proposed for use with GaN HEMTs, each with its own focus on a narrow range of applications [14][15][16][17] . InP HEMTs have unique physical properties.…”

Section: Introductionmentioning

confidence: 99%

An improved large signal model of InP HEMTs

Li¹,

Li²,

Liu³

2018

J. Semicond.

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An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately.

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Section: Introductionmentioning

confidence: 99%

An improved large signal model of InP HEMTs

Li¹,

Li²,

Liu³

2018

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…The parameter considered here is an effective drift-region length, which is extracted on the basis of an approximate lumped element equivalent-circuit. This has been proved helpful in describing the drift-region characteristics of GaAs-as well as InP-based ET-devices operating in the saturated velocity regime [6,7]. Here the drift-region is represented by a lateral parallel plate capacitor, which is considered in series with the gate-channel capacitance.…”

Section: Discussionmentioning

confidence: 99%

“…The distance of the plates is determined from the intrinsic feed-back capacitance c g d from the standard equivalentcircuit model. The details are described in [6]. This effective length is calculated from eq.1.…”

Section: Discussionmentioning

confidence: 99%