Dilute nitride multi-quantum well multi-junction design: a route to ultra-efficient photovoltaic devices

Vijaya, Gopi Krishna; Alemu, A.; Freundlich, A.

doi:10.1117/12.875239

Cited by 8 publications

(6 citation statements)

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“…The spectra F and R 2 were collected with 7.5 mW excitation power while the excitation power for spectrum R 1 is 15 mW. According to the reference [29], the energy band gap of GaAs is around 1.42 eV, and the energy band gap of Al 0.26 Ga 0.74 As layer should be larger. The high luminous flux (i.e., high laser power) can identify weaker peaks of Al 0.26 Ga 0.74 As layer due to larger energy gap.…”

Section: Resultsmentioning

confidence: 99%

Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes

et al. 2019

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Section: Resultsmentioning

confidence: 99%

Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes

et al. 2019

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“…The band offsets of the CB and VB are then determined for different nitrogen mole fractions [6]. With higher nitrogen mole fraction, the band offsets or well depths are larger.…”

Section: Ensemble Monte Carlo Simulationmentioning

confidence: 99%

“…An important application is in tandem solar cells, where the conditions of current matching and lattice matching put severe constraints on the realization of optimum bandgap materials to maximize efficiency. Dilute nitride QW solar cells have been demonstrated to achieve optimal bandgaps around 1.1 e V as the third cell of a multijunction solar cell, which would theoretically increase the one sun efficiency over 40 % [6].…”

Section: Introductionmentioning

confidence: 99%

Simulation of electron escape from GaNAs/GaAs quantum well solar cells

Zou

Honsberg

Freundlich

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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Quantum wells embedded in the active region of single-bandgap solar cells have previously been shown to increase the absorption of photons of energies lower than the host bandgap, while maintaining the open-circuit voltage. Fast carrier escape from the quantum wells is essential to achieve such performance enhancements. In the present work, we use ensemble Monte Carlo simulation to model the escape time for photo-excited carriers in dilute nitride GaNAs/GaAs quantum wells to the continuum, for different well structures. The simulated electron escape rate due to polar optical phonon absorption and emission decreases exponentially with the well depth in agreement with thermionic emission theory.Index Terms -ensemble Monte Carlo, carrier escape, quantum well,photovoltaic cells.

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“…1 Recent investigations show that Ga(As, N) is also suitable for spintronics [2][3][4] and solar cell applications. [5][6][7] A large decrease in the band gap of almost 30% compared to GaAs has been reported for an incorporation of only 4% nitrogen into Ga(As, N), which is a large deviation from a linear relationship corresponding to the Vegard's law. 8 The proposed reason is that the replacement of some As atoms with the much smaller and more electronegative N atoms leads to a large perturbation of the crystal lattice potential, resulting in an anti-crossing interaction between the localized N states and the extended conduction-band states, where a consequent splitting of the conduction band decreases the band gap.…”

Section: Introductionmentioning

confidence: 99%

Supernormal hardness increase of dilute Ga(As, N) thin films

Berggren

Hanke

Luna

et al. 2017

Journal of Applied Physics

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Hardness of epitaxial GaAs 1Àx N x films on GaAs(001) with different film thicknesses, varying from 80 to 700 nm, and nitrogen compositions x between zero (pure GaAs) and 0.031, were studied by means of nano-indentation. As a result, a disproportionate and monotonic increase by 17% in hardness was proved in the dilute range from GaAs to GaAs 0.969 N 0.031. We are tracing this observation to solid solution strengthening, an extrinsic effect based on dislocation pinning due to interstitial nitrogen. On the other hand, intrinsic effects related to different electronegativities of As and N (i.e., altered bonding conditions) could be ruled out. Furthermore, in tensilely strained GaAs 1Àx N x layers, the appearance of cracks acts as the main strain relieving mechanism. A correlation between cracking and hardness reduction is investigated and discussed as a further relaxation pathway.

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Dilute nitride multi-quantum well multi-junction design: a route to ultra-efficient photovoltaic devices

Cited by 8 publications

References 0 publications

Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes

Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes

Simulation of electron escape from GaNAs/GaAs quantum well solar cells

Supernormal hardness increase of dilute Ga(As, N) thin films

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