Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications

Mori, Takayuki; Ida, Jiro; Momose, Shun; Itoh, Kenji; Ishibashi, Koji; Arai, Y.

doi:10.1109/jeds.2018.2824344

Cited by 13 publications

(8 citation statements)

References 19 publications

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“…Figure 3 shows the measured I-V g characteristics of the floating-body and PNBT SOI-FETs. The PNBT SOI-FET produces a super-steep SS (= 0.6 mV/dec) when V b = 1.0 V. In our previous studies, the idea that the super-steep SS is induced by the positive feedback of the floating-body effect, and that the thyristor plays an important role in injecting carriers from the body terminal to the body (channel) region was proposed [7]- [9]. While a conventional floating-body SOI-FET can also induce a super-steep SS [17], [18], this would require the impact ionization phenomenon; thus, a super-steep SS does not occur in the floating-body SOI-FET at V d = 0.1 V. In the n-channel PNBT SOI-FET, the electrons diffusing from the source to the base (n-region) decrease the base potential, and this induces the injection of holes from the body terminal to the body (channel) region, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…This means that the PNBT SOI-FET contains an np-n-p thyristor between the source/drain and the body terminal, as per the schematic shown in Fig. 1 [8], [9]. We used a Keysight B1500A semiconductor device parameter analyzer with a waveform generator/fast measurement unit (WGFMU) for DC and pulse measurements.…”

Section: Device Structure and Experimental Setupsmentioning

confidence: 99%

“…a) E-mail: t mori@neptune.kanazawa-it.ac.jp DOI: 10.1587/transele.2020ECP5005 harvesting application devices [9]. The super-steep SS of our device is assumed to come from the floating-body effect, and from the conduction mechanism of the inherent thyristor structure.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Transient Characteristics on Super-Steep Subthreshold Slope “PN-Body Tied SOI-FET” — Simulation and Pulse Measurement —

Mori

Ida

Endo

2020

IEICE Trans. Electron.

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In this study, the transient characteristics on the supersteep subthreshold slope (SS) of a PN-body tied (PNBT) silicon-oninsulator field-effect transistor (SOI-FET) were investigated using technology computer-aided design and pulse measurements. Carrier charging effects were observed on the super-steep SS PNBT SOI-FET. It was found that the turn-on delay time decreased to nearly zero when the gate overdrive-voltage was set to 0.1-0.15 V. Additionally, optimizing the gate width improved the turn-on delay. This has positive implications for the low speed problems of this device. However, long-term leakage current flows on turn-off. The carrier lifetime affects the leakage current, and the device parameters must be optimized to realize both a high on/off ratio and high-speed operation.

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Section: Resultsmentioning

confidence: 99%

Section: Device Structure and Experimental Setupsmentioning

confidence: 99%

See 1 more Smart Citation

Transient Characteristics on Super-Steep Subthreshold Slope “PN-Body Tied SOI-FET” — Simulation and Pulse Measurement —

Mori

Ida

Endo

2020

IEICE Trans. Electron.

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“…The first gate has a T-shape according to the layout rules of the process that we used. 26) The DG PNBT SOI-FET has an inherent pnpn thyristor between the source/drain and the body. The first gate and the second gate control the potential of the thyristor base regions.…”

Section: Device Structure Of Dg Pnbt Soi-fet and Experimental Conditionsmentioning

confidence: 99%

Investigation of capacitor-less integrate and fire neuron by using dual-gate a PN-body tied silicon on insulator field-effect transistor

Mori

Ida

2021

Jpn. J. Appl. Phys.

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In this study, integrate and fire neuron by using a dual-gate (DG) PN-body tied (PNBT) silicon on insulator field-effect transistor (SOI-FET) was investigated. We found out that the DG PNBT SOI-FET has the integrate and fire function in a single device. The floating body and the positive feedback effect can perform the functions of the capacitor and comparator, respectively. The device can generate a continuous spike and also a single spike signal with the additional reset scheme. The reset action requires a recovery time, which can be controlled by voltage conditions. It has a chance of making a refractory period function. These characteristics mean that it is possible to realize the capacitor-less small footprint neuron circuit with the DG PNBT SOI-FET.

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“…At present, the core components used in the rectifier circuit of microwave wireless energy transmission system are commonly used by Agilent's HSMS-282X, HSMS-285X, HSMS-281X, and HSMS-286X Ge-based Schottky diodes, which can cover low energy density to high energy density applications [6][7][8]. Compared with Ge semiconductor, strained Ge semiconductor on Si substrate (s-Ge/Si) has the advantages of compatibility with Si process, low cost, and high electron mobility [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

Liu

Song

et al. 2020

Advances in Condensed Matter Physics

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In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier circuit are commonly used. Compared with Ge semiconductor, strained Ge semiconductor on Si substrate has the advantages of compatibility with Si process, low cost, and high electron mobility. It is an ideal replacement material for Ge semiconductor applications. In view of this, based on the model of the relationship between the performance of strained Ge semiconductor on Si substrate Schottky diodes and the geometric parameters of the device and the physical parameters of the material, Silvaco TCAD and ADS simulation software are jointly used to propose a novel strained Ge semiconductor on Si substrate Schottky diode for microwave rectification circuit. Simulation results show that the strained Ge semiconductor on Si substrate Schottky diode has a rectification efficiency of 70.1% when the input of the rectifier circuit is 20 dBm, the load resistance is R = 1000 Ω, and the load capacitance is C = 100 pF. Compared with traditional Ge Schottky diodes, this optimal operating point is closer to a low energy density, which is beneficial to a wide range of energy absorption. Studies have shown the feasibility of replacing Ge Schottky diodes. The research in this paper can provide valuable reference for the design and development of the core components of the rectifier circuit of the microwave infinite energy transmission system.

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Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications

Cited by 13 publications

References 19 publications

Transient Characteristics on Super-Steep Subthreshold Slope “PN-Body Tied SOI-FET” — Simulation and Pulse Measurement —

Transient Characteristics on Super-Steep Subthreshold Slope “PN-Body Tied SOI-FET” — Simulation and Pulse Measurement —

Investigation of capacitor-less integrate and fire neuron by using dual-gate a PN-body tied silicon on insulator field-effect transistor

Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

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