Direct Contact Resistance Evaluation of Thermoelectric Legs

Kim, Yeongseon; Yoon, Giwan; Park, Sang Hyun

doi:10.1007/s11340-016-0131-8

Cited by 32 publications

(11 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The output voltage and power of fabricated TE modules were measured from 573 to 873 K under a loading pressure of 2 MPa. The electrical contact resistivity between TE legs and metallization layers was measured using an in-house apparatus …”

Section: Experimental Sectionmentioning

confidence: 99%

“…The electrical contact resistivity between TE legs and metallization layers was measured using an in-house apparatus. 39 Scanning and Transmission Microscopy. The interfaces between metallization layer and TE legs were examined using a scanning electron microscope (SEM, JEOL JSM-7000F) equipped with an energy-dispersive X-ray spectroscopy (EDS) detector.…”

Section: ■ Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High-Power-Density Skutterudite-Based Thermoelectric Modules with Ultralow Contact Resistivity Using Fe–Ni Metallization Layers

Park

Jin

Cha

et al. 2018

ACS Appl. Energy Mater.

View full text Add to dashboard Cite

Most reported thermoelectric modules suffer from considerable power loss due to high electrical and thermal resistivity arising at the interface between thermoelectric legs and metallic contacts. Despite increasing complaints on this critical problem, it has been scarcely tackled. Here we report the metallization layer of Fe−Ni alloy seamlessly securing skutterudite materials and metallic electrodes, allowing for a minimal loss of energy transferred from the former. It is applied to an 8couple thermoelectric module that consists of n-type (Mm,Sm) y Co 4 Sb 12 (ZT max = 0.9) and p-type DD y Fe 3 CoSb 12 (ZT max = 0.7) skutterudite materials. It performs as a diffusion barrier suppressing chemical reactions to produce a secondary phase at the interface. Consequent high thermal stability of the module results in the lowest reported electrical contact resistivity of 2.2−2.5 μΩ cm 2 and one of the highest thermoelectric power density of 2.1 W cm −2 for a temperature difference of 570 K. Employing a scanning transmission electron microscope equipped with an energy-dispersive X-ray spectroscope detector, we confirmed that it is negligible for atomic diffusion across the interface and resulting formation of a detrimental secondary phase to energy transfer and thermal stability of the thermoelectric module.

show abstract

Section: Experimental Sectionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

High-Power-Density Skutterudite-Based Thermoelectric Modules with Ultralow Contact Resistivity Using Fe–Ni Metallization Layers

Park

Jin

Cha

et al. 2018

ACS Appl. Energy Mater.

View full text Add to dashboard Cite

show abstract

“…The electrical contact resistance between the metallization layer and the SKD materials was measured by using an in-house electrical contact resistance evaluation system. 42 The specific contact resistance (SCR) was calculated from the resistance change that occurred at the interface, multiplied by the contact area.…”

Section: Methodsmentioning

confidence: 99%

Development of Indium-Tin Oxide Diffusion Barrier for Attaining High Reliability of Skutterudite Modules

Kim

Lee

Yoon

et al. 2020

ACS Appl. Energy Mater.

View full text Add to dashboard Cite

Thermoelectric (TE) modules that operate at an intermediate-temperature range (600−900 K) inevitably face reliability issues during their operation when subjected to prolonged thermal cycling or due to the aging of the materials. To maintain the sustained performance of TE modules, antiaging techniques such as antioxidation coating and vacuum packaging are necessary. Metallization is one of the key technologies for fabricating highly reliable TE modules because the resulting metal layer can serve as a diffusion barrier preventing an elemental diffusion. Herein, indium-tin oxide (ITO) was investigated as a diffusion barrier for skutterudite (SKD); the compound has high conductivity compared to other oxides and low reactivity compared to metals. Ti/ITO/SKD-structured TE legs were fabricated by co-sintering using a spark plasma sintering system. The ITO layer was found to considerably suppress elemental diffusion by forming Ti−O bonding at the interface. The electrical contact resistance was also maintained at a low level both before and after the thermal aging. An eight-couple TE module was used to verify the reliability of the as-synthesized SKD module. The maximum power density of the Ti/ITO/SKD module was found to be approximately 1 W/cm 2 . A thermal cycling test, run for 500 cycles, was conducted for both Ti/SKD and Ti/ITO/SKD structures. It confirmed that the power output of the Ti/ITO/SKD-structured module is maintained, while the power output of the Ti/SKD-structured module decreased 1% after the thermal cycling. In conclusion, the as-developed TE module, owing to its high durability and reliability, was successfully fabricated.

show abstract

“…Heat treatments were conducted at 723 K in an Ar atmosphere to verify the thermal stability of metallization interfaces [6,7]. To understand the effects of heat treatments, the electrical contact resistances were measured before and after heat treatments by home-made resistance scanning measurement equipment [8].…”

Section: Methodsmentioning

confidence: 99%

Multi-Layer Metallization Structure Development for Highly Efficient Polycrystalline SnSe Thermoelectric Devices

et al. 2017

View full text Add to dashboard Cite

Abstract:Recently, SnSe material with an outstanding high ZT (Figure of merit) of 2.6 has attracted much attention due to its strong applicability for highly efficient thermoelectric devices. Many studies following the first journal publication have been focused on SnSe materials, not on thermoelectric devices. Particularly, to realize highly efficient intermediate-temperature (600~1000 K) thermoelectric modules with this promising thermoelectric material, a more thermally and electrically reliable interface bonding technology needs to be developed so that the modules can stably perform their power generation in this temperature range. In this work, we demonstrate several approaches to develop metallization layers on SnSe thermoelectric legs. The single-layer metallization shows limitations in their electrical contact resistances and elemental diffusions. The Ag/Co/Ti multi-layer metallization results in lowering their electrical contact resistances, in addition to providing more robust interfaces. Moreover, it is found to maintain the interfacial characteristics without any significant degradation, even after heat treatment at 723 K for 20 h. These results can be effectively applied in the fabrication of thermoelectric devices or modules that are made of the SnSe thermoelectric materials.

show abstract

Direct Contact Resistance Evaluation of Thermoelectric Legs

Cited by 32 publications

References 21 publications

High-Power-Density Skutterudite-Based Thermoelectric Modules with Ultralow Contact Resistivity Using Fe–Ni Metallization Layers

High-Power-Density Skutterudite-Based Thermoelectric Modules with Ultralow Contact Resistivity Using Fe–Ni Metallization Layers

Development of Indium-Tin Oxide Diffusion Barrier for Attaining High Reliability of Skutterudite Modules

Multi-Layer Metallization Structure Development for Highly Efficient Polycrystalline SnSe Thermoelectric Devices

Contact Info

Product

Resources

About